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Details, datasheet, quote on part number:NE24200
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| Part: | NE24200 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs => GaAs |
| Description: | Ultra Low Noise Pseudomorphic HJ Fet (space Qualified) |
| Company: | California Eastern Laboratories |
| Datasheet: | Download NE24200 datasheet File size : 45 kB |
| Request For quote: | Find where to buy NE24200
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Datasheet text preview:
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
FEATURES
· VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz
Noise Figure, NF (dB)
3
GA
NE24200
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA
24
· LG = 0.25 µm, WG = 200 µm
2
18
1.5
15
DESCRIPTION
The NE24200 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate results in lower noise figure and high associated gain for space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
1
12
0.5
NF
9
0 1 10 20 30
6
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS N F OPT 1 PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Saturated Drain Current at VDS = 2 V, VGS = 0 V Pinch-Off Voltage at VDS = 2 V, IDS = 100 µA Transconductance at VDS = 2 V, IDS = 10 mA Gate to Source Leakage Current at VGS = -3 V Thermal Resistance (Channel-to-Case) UNITS dB dB dB dB dBm dBm dB dB mA V mS µA °C/W 15 -2.0 45 MIN NE24200 00 (CHIP) TYP 0.35 0.6 16.0 11.0 9.5 11.0 11.8 12.8 40 -0.8 60 0.5 10 260 70 -0.2 MAX
0.7
GA1
10.0
P 1dB
G 1dB
IDSS VP gm IGSO RTH(CH-C)2
Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink.
California Eastern Laboratories
Associated Gain, GA (dB)
· HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz
2.5
21
NE24200 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VDS V GSO IDS IGRF TCH T STG PT2 PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA µA °C °C mW RATINGS 4.0 -3.0 IDSS 200 175 -65 to +175 200
TYPICAL NOISE PARAMETERS1,2 (TA = 25°C)
VDS = 2 V, IDS = 10 mA FREQ. ( GHz) 1 2 4 6 8 10 12 14 16 18 20 NFOPT ( dB) 0.30 0.31 0.35 0.38 0.43 0.50 0.60 0.71 0.85 1.0 1.2 1.5 1.8 2.1 2.4 2.8 GA ( dB) 22.0 19.0 16.0 14.2 12.9 12.0 11.0 10.6 10.0 9.5 9.0 8.6 8.3 7.9 7.6 7.3 MAG 0.81 0.79 0.75 0.72 0.70 0.68 0.66 0.64 0.62 0.58 0.55 0.52 0.49 0.48 0.46 0.46 OPT ANG 10 17 31 45 59 77 92 108 126 140 153 164 175 -176 -168 -160 Rn/50 0.39 0.36 0.33 0.30 0.27 0.24 0.22 0.19 0.18 0.15 0.13 0.11 0.10 0.08 0.07 0.05
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage . 2. With chip mounted on an alumina heat sink (size: 3 x 3 x 0.6 mm thick).
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
22 24 26 28 30
Power Dissipation, PT (mW)
200 Infinite Heat sink 150
100
50
Notes: 1. Noise Parameters include Bond Wires. Gate: Total 2 wires, 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wires, 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wires, 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. 2. Data at 28 and 30 GHz is extrapolated, not measured.
0 0 25 50 75 100 125 150 175 200
Ambient Temperature, TA (°C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
50
1.4
NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz
14
Optimum Noise Figure, NFOPT (dB)
VGS 0.0 V
1.2
13
-0.15 V 30
1 NF 0.8 GA 0.6 0.4
12
11 10 9
20
-0.30 V
10
-0.45 V -0.60 V 0 1 2 3
0.2 0 0 5 10 15 20 25 30 35
8 7
0
Drain to Source Voltage, VDS (V)
Drain Current, IDS (mA)
Associated Gain, GA (dB)
Drain Current, IDS (mA)
40
NE24200 TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C)
j50 j25 j100
+120°
+90° 5 4
+60°
+150°
3 2
+30°
j10
S11 30 GHz 10 25 S22 30 GHz 50 100 S22 .1 GHz S11 .1 GHz
+ 180° S21 .1 GHz
1 .05 S12 .1 GHz .15 .20 .25 0° S12 S21 30 GHz 30 GHz
0
-j10
-150° -30°
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 10 mA)
-120° -90°
-60°
NE24200 VDS = 2 V, IDS = 10 mA
FREQUENCY ( GHz) 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 26.0 28.0 30.0 MAG .999 .999 .999 .997 .989 .978 .967 .947 .927 .909 .891 .873 .856 .838 .820 .803 .786 .769 .753 .736 .721 .705 .691 .662 .635 .610 .587 .565 S11 ANG -1.3 -2.5 -6.1 -11.9 -23.1 -33.7 -43.7 -53.1 -62.2 -70.8 -79.0 -86.8 -94.3 -101.5 -108.4 -115.0 -121.4 -127.5 -133.5 -139.2 -144.7 -150.1 -155.3 -165.2 -174.6 176.5 168.1 160.0 MAG 5.039 5.021 4.966 4.876 4.702 4.535 4.375 4.222 4.075 3.933 3.797 3.666 3.540 3.418 3.301 3.188 3.079 2.973 2.871 2.773 2.677 2.585 2.495 2.324 2.163 2.011 1.867 1.732 S21 ANG 179.0 178.0 175.1 170.4 161.2 152.3 143.8 135.6 127.8 120.2 112.8 105.8 98.9 92.3 86.0 79.8 73.8 68.1 62.5 57.1 51.8 46.7 41.7 32.3 23.3 14.8 6.8 -1.00 MAG .002 .004 .008 .016 .030 .042 .052 .062 .071 .079 .086 .092 .099 .104 .109 .114 .119 .123 .127 .131 .135 .138 .142 .148 .153 .159 .163 .168 S12 ANG 89.2 88.6 86.7 83.6 77.3 70.9 64.7 58.8 53.1 47.8 42.9 38.3 34.2 30.4 26.9 23.8 20.9 18.4 16.1 14.0 12.1 10.4 8.9 6.3 4.2 2.4 1.0 0.1 MAG .617 .617 .617 .617 .614 .611 .606 .600 .593 .585 .576 .567 .557 .547 .536 .525 .514 .503 .492 .481 .470 .460 .450 .433 .419 .410 .406 .407 S22 ANG -0.7 -1.4 -4.2 -8.4 -15.4 -22.4 -29.4 -36.0 -41.2 -46.1 -51.0 -55.8 -60.5 -65.1 -69.6 -73.9 -78.2 -82.4 -86.6 -90.6 -94.5 -98.3 -102.0 -109.1 -115.9 122.3 -128.3 -133.9 .05 .03 .01 .01 .04 .07 .09 .12 .16 .20 .23 .26 .29 .32 .35 .37 .40 .43 .45 .48 .51 .54 .57 .64 .71 .76 .85 .92 K S21 ( dB) 14.0 14.0 13.9 13.8 13.4 13.1 12.8 12.5 12.2 11.9 11.6 11.3 11.0 10.7 10.4 10.1 9.8 9.5 9.2 8.8 8.5 8.2 7.9 7.3 6.7 6.1 5.4 4.8 MAG2 ( dB) 34.1 31.4 27.7 24.9 22.0 20.4 19.2 18.3 17.6 17.0 16.4 16.0 15.5 15.1 14.8 14.4 14.1 13.8 13.5 13.2 13.0 12.7 12.5 12.0 11.5 11.0 10.6 10.1
Notes: 1. S-Parameters include Bond Wires. Gate: Total 2 wire(s), 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wire(s), 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wire(s), 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold.
MAG =
MAG = Maximum Available Gain MSG = Maximum Stable Gain
|S21| |S12|
(K ±
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
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