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Details, datasheet, quote on part number:NE25139T1U72
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| Part: | NE25139T1U72 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs => GaAs |
| Description: | General Purpose Dual-gate GAAS MesFET |
| Company: | California Eastern Laboratories |
| Datasheet: | Download NE25139T1U72 datasheet File size : 56 kB |
| Request For quote: | Find where to buy NE25139T1U72
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Datasheet text preview:
GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
· SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER · LOW CRSS: 0.02 pF (TYP) · HIGH GPS: 20 dB (TYP) AT 900 MHz · LOW NF: 1.1 dB TYP AT 900 MHz · LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm · ION IMPLANTATION · AVAILABLE IN TAPE & REEL OR BULK
Power Gain, GPS (dB)
20
NE25139
POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE
GPS 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V 10 ID = 10 mA f = 900 MHz 5
NF 0 0 5 10
0
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package.
Drain to Source Voltage, VDS (V)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOL NF GPS BVDSX IDSS VG1S (OFF) VG2S (OFF) IG1SS IG2SS |YFS| C ISS CRSS PARAMETERS AND CONDITIONS Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, ID = 10 µA Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V Gate 1 to Source Cutoff Voltage at VDS = 5 V, VG2S = 0 V, ID = 100 µA Gate 2 to Source Cutoff Voltage at VDS = 5 V, VG1S = 0 V, ID = 100 µA Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0 Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 kHz Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz UNITS dB dB V mA V V µA µA mS pF pF 18 0.5 25 1.0 0.02 16 13 5 -3.5 -3.5 10 10 35 1.5 0.03 20 40 MIN NE25139 39 TYP 1.1 20 MAX 2.5
California Eastern Laboratories
Noise Figure, NF (dB)
NE25139 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS V DS VG1S VG2S ID PT TCH TSTG PARAMETERS Drain to Source Voltage Gate 1 to Source Voltage Gate 2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 13 -4.5 -4.5 IDSS 200 125 -55 to +125
TYPICAL NOISE PARAMETERS (TA = 25°C)
(VDS = 5 V, VG2S = 0 V, IDS = 10 mA) FREQ. (GHz) 0.5 0.9 1.5 2.0 3.0 4.0 NFOPT (dB) 0.9 1.2 1.5 1.9 2.5 3.3 GA (dB) 18.5 16.0 14.6 12.5 11.0 9.5 0.9 0.82 0.71 0.55 0.34 0.25 OPT MAG ANG 18 28 45 75 116 154 Rn/50 1.9 1.2 0.9 0.67 0.5 0.4
Note: 1. Operation in excess of anyone of these parameters may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE
250
DRAIN CURRENT vs. GATE 1 TO SOURCE VOLTAGE
30 VDS = 5V
Total Power Dissipation, PT (mW)
FREE AIR
Drain Current, ID (mA)
200
VG2S = 1.0V 20
150
0.5 V 10
100
0V
50
-0.5 V
0 0 25 50 75 100 125
0 -2.0 -1.0 0 +1.0
Ambient Temperature, TA (°C) FORWARD TRANSFER ADMITTANCE vs. GATE 1 TO SOURCE VOLTAGE
Gate 1 to Source Voltage, VG1S (V)
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
Forward Transfer Admittance, |YFS| (mS)
Forward Transfer Admittance, |YFS| (mS)
30 VDS = 5V f = 1kHz
30 VDS = 5 V f = 1 kHz
VG2S = 1.0 V 20
20
VG2S = 1.0 10 0.5 V -0.5 V 0 -2.0 -1.0 0 +1.0 0V
10
VG2S = 0.5 V 0 0 10 20 30
Gate 1 to Source Voltage, VG1S (V)
Drain Current, ID (mA)
NE25139 TYPICAL PERFORMANCE CURVES (TA = 25°C)
INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE
2.0 VD S = 5 V f = 1kHz
POWER GAIN AND NOISE FIGURE vs. GATE 2 TO SOURCE VOLTAGE
30 VDS = 5 V VG2S = 1 V ID = 10 mA f = 900 MHz
1
10
Input Capacitance, CISS (pF)
15
GPS
VG2S = 1 V at ID = 10 mA 1
0 5 -15 NF -30
1.0 VG2S = 1 V at ID = 5 mA
1
-45
-1.0 0 +1.0
0 -2.0 -1.0 0 +1.0 +2.0
-3.0
Gate 2 to Source Voltage, VG2S (V) Note: 1. Initial bias conditions. VG1S set to obtain specified drain current.
Gate 2 to Source Voltage, VG2S (V) Note: 1. Initial bias conditions. VG1S set to obtain specified drain current.
POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT
25 VD S = 5 V VG2S = 1 V f = 900 MHz 20 10
15
GP S 5
10
5
NF
0 0 5 10
0
Drain Current, ID (mA)
Noise Figure, NF (dB)
Power Gain, GP (dB)
Noise Figure, NF (dB)
Power Gain, GP (dB)
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