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Details, datasheet, quote on part number:NE5500179A-T1
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| Part: | NE5500179A-T1 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs => GaAS |
| Description: | 4.8 V Operation Silicon RF Power MOSFET For GSM1800 And GSM1900 Transmission Amplifiers |
| Company: | California Eastern Laboratories |
| Datasheet: | Download NE5500179A-T1 datasheet File size : 42 kB |
| Request For quote: | Find where to buy NE5500179A-T1
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Datasheet text preview:
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS
FEATURES
· HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm · HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm · HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm · SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX · SINGLE SUPPLY: 3.0 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 Max 1.5 ± 0.2
Source Source Gate
5.7 Max 0.6 ± 0.15
Drain
0.8 ± 0.15 4.4 Max
Gate
1.0 Max
Drain
1.2 Max
0.4 ± 0.15 5.7 Max
0.9 ± 0.2 0.2 ± 0.1
0.8 Max 3.6 ± 0.2
Bottom View
DESCRIPTION
The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27 dBm output power with 50% power added efficiency at 3.5 V by varying the gate voltage as a power control function.
APPLICATIONS
· DIGITAL CELLULAR PHONES · DIGITAL CORDLESS PHONES · OTHERS
ELECTRICAL CHARACTERISTICS (TA
PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS V TH gm RDS(ON) BVDSS CHARACTERISTICS Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage Transconductance Drain to Source On Resistance Drain to Source Breakdown Voltage
= 25°C) NE5500179A 79A
UNITS nA nA V S V
MIN 1.0 20
TYP 1.35 0.41 1.00 24
MAX 100 100 2.0 -
TEST CONDITIONS VGSS = 6.0 V VDSS = 8.5 V VDS = 4.8 V, IDS = 1 mA VDS = 4.8 V, IDS1 = 150 mA, IDS2 = 250 mA VGS = 6.0 V, VDS = 0.5 V IDSS = 10 A
California Eastern Laboratories
NE5500179A PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25°C)
SYMBOLS GL POUT IOP CHARACTERISTICS Linear Gain Output Power Operating Current Power Added Efficiency Linear Gain Output Power Operating Current Power Added Efficiency Maximum Output Power Operating Current Linear Gain Output Power Operating Current Power Added Efficiency Maximum Output Power Operating Current Linear Gain Output Power Operating Current Power Added Efficiency UNITS dB dBm mA % dB dBm mA % dBm mA dB dBm mA % dBm mA dB dBm mA % MIN -- -- -- -- -- -- -- -- -- -- -- 28.5 -- 47 -- -- -- -- -- -- TYP 13.0 24.5 170 50 13.5 26.5 210 52 27.0 260 14.0 29.5 300 55 30.0 350 14.5 31.5 380 55 -- -- -- -- -- -- -- -- -- -- -- -- f = 1.9 GHz, PIN = 20 dBm VDS = 4.8 V, VGS = 2.5 V f = 1.9 GHz, PIN = 0 dBm, VDS =6.0 V, IDQ = 100 mA POUT IOP f = 1.9 GHz, PIN = 22 dBm, VDS =6.0 V, IDQ = 100 mA f = 1.9 GHz, PIN = 18 dBm VDS = 3.5 V, VGS = 2.5 V f = 1.9 GHz, PIN = 0 dBm, VDS = 4.8 V, IDQ = 100 mA P OUT(1) IOP(1) f = 1.9 GHz, PIN = 20 dBm, VDS = 4.8 V, IDQ = 100 mA -- -- -- f = 1.9 GHz, PIN = 0 dBm, VDS = 3.5 V, IDQ = 100 mA P OUT(1) IOP(1) f = 1.9 GHz, PIN = 18 dBm, VDS = 3.5 V, IDQ = 100 mA MAX -- -- -- TEST CONDITIONS f = 1.9 GHz, PIN = 0 dBm, VDS = 3.0 V, IDQ = 100 mA f = 1.9 GHz, PIN = 15 dBm, VDS = 3.0 V, IDQ = 100 mA
ADD
GL
ADD
P OUT(2) IOP(2) GL
ADD
P OUT(2) IOP(2) GL
ADD
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS VDS VGS ID ID P IN PT TCH T STG PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current Drain Current (Pulse Test)2 Input Power3 Total Power Dissipation Channel Temperature Storage Temperature UNITS V V A A dBm W °C °C RATINGS 8.5 6 0.25 0.5 25 1.6 125 -55 to +125
ORDERING INFORMATION1
PART NUMBER NE5500179A-T1 QTY 1 Kpcs/Reel
Note: 1. Embossed tape 12 mm wide. Gate pin faces perforation side of the tape.
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, TON = LMS. 3. Frequency = 1.9 GHz, VDS = 4.8 V.
RECOMMENDED OPERATING CONDITIONS
SYMBOLS V DS VGS ID P IN f TOP PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current (Pulse Test) Input Power Operating Frequency Range Operating Temperature Duty Cycle 50%, Ton1ms Frequency = 1.9 GHz, VDS = 4.8 V TEST CONDITIONS UNITS V V A dBm GHz °C MIN 3.0 0 -- 21 1.6 -30 TYP 3.5 2.0 -- 22 -- 25 MAX 6.0 2.5 0.5 23 2.5 85
NE5500179A TYPICAL PERFORMANCE CURVES
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
3.0 VGS MAX = 10 V Step = 1.0 V
1000 VDS = 4.8 V
(TA = 25°C)
QUIESCENT DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
2.5
Quiescent Drain Current, IDQ (mA)
6 8 10 12 14 16
Drain Current, IDS (A)
100
2.0
1.5
10
1.0
1
0.5
0.0 0 2 4
0.1 1.0 1.5 2.0 2.5 3.0
Drain to Source Voltage, VDS (V)
Gate to Source Voltage, VGS (V)
Efficiency/Power Added Efficiency, , ADD (%)
Drain Current, IDS (mA)
VDS = 4.8 V IDQ = 100 mA f = 1.9 GHz
PO = 29.8 dBm 400 POUT
VDS = 4.8 V f = 1.9 GHz PIN = 20 dBm
PMAX = 30.1 dBm 400 POUT IDS
Output Power, POUT (dBm)
30
Output Power, POUT (dBm)
30
25 ID 20
300
29
300
200
100
28
200
15
27
ADD
100
50
ADD
26 0.0 1.0 APC 2.0 3.0 4.0
100
10 0 5 10 15 20 25
0
0
0
Input Power, PIN (dBm)
Gate to Source Voltage, VGS (V)
Efficiency/Power Added Efficiency, , ADD (%)
30
Drain Current, IDS (mA)
Output Power, POUT (dBm)
Output Power, POUT (dBm)
VDS = 3.5 V IDQ = 100 mA f = 1.9 GHz
500 PO = 26.8 dBm
28
VDS = 3.5 V f = 1.9 GHz PIN = 18 dBm
PMAX = 27.2 dBm 400 POUT
25 POUT 20 ID 15
400
27
300
26 IDS 25
300
200
100
200
10 100 50
24 100 50
ADD
5 0 5 10 15 20 25 0 0
ADD
APC 23 0.0 1.0 2.0 3.0 0 4.0 0
Input Power, PIN (dBm)
Gate to Source Voltage, VGS (V)
Drain Current, IDS (mA)
100
500
Efficiency/Power Added Efficiency, , ADD (%)
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE
Drain Current, IDS (mA)
100 50 0
35
500
31
500
Efficiency/Power Added Efficiency, , ADD (%)
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY AND POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE
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