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Details, datasheet, quote on part number:NE5510179A-T1
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| Part: | NE5510179A-T1 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs => GaAS |
| Description: | 3.5 V Operation Silicon RF Power MOSFET For 1.9 GHZ Transmission Amplifiers |
| Company: | California Eastern Laboratories |
| Datasheet: | Download NE5510179A-T1 datasheet File size : 40 kB |
| Request For quote: | Find where to buy NE5510179A-T1
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Datasheet text preview:
PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS
FEATURES
· HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm · HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm · HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm · SINGLE SUPPLY: 2.8 to 6.0 V · SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
4.2 Max
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
1.5 0.2
Source Source
5.7 Max 0.6 0.15
X
Gate
Drain
0.8 0.15 4.4 Max
Gate
1.0 Max
Drain
1.2 Max
0.8 Max 3.6 0.2
5.7 Max
8
0.4 0.15
DESCRIPTION
The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5 V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.5 V supply voltage, or can deliver 29 dBm output power at 2.8 V by varying the gate voltage as a power control function.
APPLICATIONS
· DIGITAL CELLULAR PHONES: 3.5 V GSM 1800/GSM 1900 Class 1 Handsets · OTHERS: 1.6 - 2.0 GHz TDMA Applications
ELECTRICAL CHARACTERISTICS (TA
PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS V TH gm RDS (ON) BVDSS CHARACTERISTICS Gate-to-Source Leakage Current Drain-to-Source Leakage Current Gate Threshold Voltage Transconductance Drain-to-Source On Resistance Drain-to-Source Breakdown Voltage V
= 25°C) NE5510179A 79A
UNITS nA nA V S
MIN
TYP
0.9 0.2
MAX 100 100
0.2 0.1
TEST CONDITIONS VGSS = 6.0 V VDSS = 8.5 V VDS = 3.5 V, IDS = 1 mA VDS = 3.5 V, IDS1 = 300 mA, IDS2 = 500 mA VGS = 6.0 V, VDS = 0.5 V IDSS = 10 A
1.0
1.35 0.82 0.5
2.0
20
24
California Eastern Laboratories
NE5510179A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS VDS VGS ID ID P IN PT TCH T STG PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current (continuous) Drain Current (Pulse Input Power3 Test)2 A dBm W °C °C UNITS V V RATINGS 8.5 6 A 0.5 1.0 27 1.6 125 -55 to +125
RECOMMENDED OPERATING CONDITIONS
SYMBOLS VDS VGS IDS P IN freq TOP PARAMETERS Drain to Supply Voltage Gate Supply Voltage Drain Current (Pulse Test)1 Input Power2 Operating Frequency Range Operating Temperature UNITS V V A dBm GHz °C TYP 3.5 2.0 22 25 MAX 6.0 2.5 0.5 23 2.0 85
Total Power Dissipation Channel Temperature Storage Temperature
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1ms. 3. Freq = 1.9 GHz, VDS = 3.5 V.
Note: 1. Duty Cycle 50%, Ton = 1ms. 2. Freq = 1.9 GHz, VDS = 3.5 V.
ORDERING INFORMATION1
PART NUMBER NE5510179A-T1 Note: QTY 1 K/Reel
TYPICAL PERFORMANCE CURVES
DRAIN CURRENT vs. DRAIN TO SOURCE CURRENT
6.0 VGS (MAX) = 10 V, Step = 1.0 V 5.0
(TA = 25°C)
1. Embossed tape 12 mm wide. Gate pin face to perforations side of the tape.
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
1000 VDS = 3.5 V
Drain Current, IDQ (mA)
0 2 4 6 8 10 12 14 16
Drain Current, ID (A)
100
4.0
3.0
10
2.0
1
1.0
0.0
0 1.0 1.5 2.0 2.5 3.0
Drain to Source Current, VDS (V)
Gate to Source Voltage, VGS (V)
NE5510179A TYPICAL PERFORMANCE CURVES
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. INPUT POWER
31 PO = 29.7 dBm
(TA = 25°C) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. GATE TO SOURCE VOLTAGE
31 PMAX = 30.1 dBm 1250
1250
Efficiency, Power Added Efficiency, , ADD%
26 VDS = 3.5 V, IDQ = 200 mA, freq = 1.9 GHz POUT
1000
30
VDS = 3.5 V, freq = 1.9 GHz, PIN = 22 dBm
1000 POUT 750
IDS
21
750
29
16
ID
500 250 ADD
100
28 27 ADD 26 0.0 APC 1.0 2.0 3.0
500
100
11
50
250
50
6 0 5 10 15 20 25
0
0
0 4.0
0
Input Power, PIN (dBm)
Gate to Source Voltage, VGS (V) OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. GATE TO SOURCE VOLTAGE
Drain Current, IDS (mA)
Efficiency, Power Added Efficiency, , ADD%
30 PO = 28.7 dBm
1250
1250 PMAX = 29.0 dBm
Output Power, POUT (dBm)
Output Power, POUT (dBm)
25 VDS = 2.8 V, IDQ = 200 mA, freq = 1.9 GHz POUT
1000
29
VDS = 2.8 V, freq = 1.9 GHz, PIN = 22 dBm
1000 POUT 750
20
750
28
Ids
15
ID
500 250 ADD
100
27 26 ADD 25 0.0 APC 1.0 2.0 3.0
500
100
10
50
250
50
5
0 0 5 10 15 20 25
0
0 4.0
0
Input Power, PIN (dBm)
Gate to Source Voltage, VGS (V)
P.C.B. LAYOUT1 (Units in mm)
4.0 1.7
Drain
Gate
5.9
1.2
Source 0.5 6.1 0.5
0.5
Through hole 0.2 × 33
1.0
Note: 1. Use rosin or other material to prevent solder from penetrating through-holes.
Efficiency, Power Added Efficiency, , ADD%
30 30
Drain Current, IDS (mA)
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY, AND POWER ADDED EFFICIENCY VS. INPUT POWER
Efficiency, Power Added Efficiency, , ADD%
Output Power, POUT (dBm)
Drain Current, IDS (mA)
Output Power, POUT (dBm)
Drain Current, IDS (mA)
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