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Details, datasheet, quote on part number:NE688M13
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Datasheet text preview:
PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M13
FEATURES
· NEW MINIATURE M13 PACKAGE: Small transistor outline 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
+0.1 0.5 0.05 +0.1 0.15 0.05 1 0.35 0.3
2
· · ·
XX
1
+0.1 1.0 0.05
3
0.7 0.35 2 +0.1 0.15 0.05 0.2
3
+0.1 0.2 0.05
0.1
0.1
0.2
DESCRIPTION
The NE688M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles.
0.5±0.05
+0.1 0.125 0.05
Bottom View
PIN CONNECTIONS 1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz Forward Current Gain at VCE = 1 V, IC = 3 mA Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz µA µA pF 0.7 UNITS GHz GHz dB dB dB dB 3 80 MIN 4 NE688M13 2SC5616 M13 TYP 5 9.5 1.9 1.7 4 8 145 0.1 0.1 0.8 2.5 MAX
Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE688M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS V CBO V CEO VEBO IC PT2 TJ T STG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 9 6 2 100 140 150 -65 to +150
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
30 200 µA 25
200 VCE = 1 V
D.C. CURRENT GAIN vs. COLLECTOR CURRENT
Collector Current, IC (mA)
180 µA 160 µA
20
140 µA 120 µA
15
DC Current Gain, hFE
7
100 µA 80 µA 60 µA
100
10
5
40 µA IB = 20 µA
0 0 2.5 5
0 0.1 0.2 0.5 1 2 5 10 20 50 100
Collector to Emmiter Voltage, VCE (V)
Collector Current, IC (mA)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 50 VCE = 1 V
Collector Current, IC (mA)
20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.5 1
Base to Emmiter Voltage, VBE (V)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES · Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393 · FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) · Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 2/09/2000
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