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Details, datasheet, quote on part number:NE68939
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| Part: | NE68939 |
| Category: | Discrete => Transistors => Bipolar => RF => Power |
| Description: | NPN Silicon Epitaxial Transistor |
| Company: | California Eastern Laboratories |
| Datasheet: | Download NE68939 datasheet File size : 28 kB |
| Request For quote: | Find where to buy NE68939
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Datasheet text preview:
PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
· OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 · 4 PIN MINI MOLD PACKAGE: NE68939
NE68939
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
+0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4)
2.9 ± 0.2
0.95 0.85
2
3 1.9
1
4
DESCRIPTION
The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX driver stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel. The NE68939 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance.
+0.10 0.6 -0.05
1) Collector 2) Emitter 3) Base 4) Emitter
+0.2 1.1 -0.1
0.8
0.16 +0.10 -0.06
5° 0 to 0.1
5°
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PART NUMBER PACKAGE CODE SYMBOLS ICBO I EBO hFE P-1 Gp PARAMETERS Collector Cutoff Current, VCB = 5 V, IE = 0 Emitter Cutoff Current, VEB = 1 V, IC = 0 DC Current Gain, VCE = 3.6 V, IC = 100 mA Output Power Power Gain Collector Efficiency VCE = 3.6 V, f = 1.9 GHZ ICq = 2 mA (Class AB) Duty 1/8 dBm dB % MS 6.5 50 UNITS µA µA 30 24.5 8 62 10.0 MIN NE68939 39 TYP MAX 2.5 2.5
C
TON
Maximum Device On Time
California Eastern Laboratories
NE68939 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS VCBO VCEO V EBO IC PT Tj TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current mA Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V 150 mW °C °C 200 (CW) 150 -65 to +150
1.9
RATINGS 9.0 6.0 2.0
OUTLINE 39 RECOMMENDED P.C.B. LAYOUT
2.4
2
3
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
1 4 1.0
1.0
APPLICATION
(1) TX Amplifier for DECT
+3 dBm Po = 27 dBm
ORDERING INFORMATION
PART NUMBER NE68939-T1 Note: 1. Lead material: Cu Lead plating: PbSn QTY 3K/REEL
NE68839
NE68939
NE69039
(2) TX Amplifier for PHS
-14 dBm P1 = 22 dBm
ZIN (), ZOUT () DATA
j50
µPC2771T
NE68939
NE69039
j25
j100
OUTPUT POWER, COLLECTOR EFFICIENCY, COLLECTOR CURRENT AND POWER GAIN VS. INPUT POWER
30 f = 1.9 GHZ, VCC = 3.6V IC = 1mA (Duty 1/8) 25 Pout 20 C 15 IC 10 GP 5
j10 ZIN 0 0
Collector Efficency, C (%)
ZOUT
Output Power, Pout (dBm)
80
Collector Currents, IC (mA)
-j10
60 40 20 0 8 7 6 5 4
-j25 -j50
-j100
Power Gain, Gp (dB)
30 20 10 0
Z OUT Z IN
5
10
15
20
25
Input Power, Pin (dBm) TYPICAL DATA f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8 P1dB C IC GL 24.5 62 15 9.0 dbm % mA db IMPEDANCE LOOKING INTO DEVICE VCC = 3.6 V, ICQ = I mA, CLASS AB FREQUENCY (GHZ) 1.9 0.9 ZIN () 7.85+j5.62 3.1+j11.6 ZOUT () 21.9-j11.6 5.3-j5.7
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES · Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393 · FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) · Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE
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