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Details, datasheet, quote on part number:NE696M01-T1
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Datasheet text preview:
PRELIMINARY DATA SHEET
NPN SILICON HIGH FREQUENCY TRANSISTOR
NE696M01
FEATURES
· · · · · HIGH fT: 14 GHz TYP at 3 V, 10 mA LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01 TOP VIEW
2.1 ± 0.1 1.25 ± 0.1
0.65 2.0 ± 0.2 1.3
1
6 0.2 (All Leads) 5
T95
SIDE VIEW
2
3
4
DESCRIPTION
The NE696M01 is an NPN high frequency silicon epitaxial transistor (NE685) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE696M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations.
0.9 ± 0.1 0.7 0.15 - 0.05 0 ~ 0.1
+0.10
PIN OUT 1. Emitter 2. Emitter 3. Base
4. Emitter 5. Emitter 6. Collector
Note: Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT Cre 2 |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain at VCE = 3 V, IC = 10 mA Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz GHz pF dB dB UNITS µA µA 80 120 14 0.15 14 1.6 MIN NE696M01 M01 TYP MAX 0.1 0.1 160
Notes: 1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. 3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
California Eastern Laboratories
NE696M01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS V CBO V CEO VEBO IC PT TJ T STG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 9 6 2 30 150 150 -65 to +150
NE696M01 TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ. (GHz) NFOPT (dB) GA (dB) OPT MAG ANG Rn/50
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage.
ORDERING INFORMATION
PART NUMBER NE696M01-T1 QUANTITY 3000 PACKAGING Tape & Reel
VCE = 1 V, IC = 3 mA 1.0 1.4 1.4 1.46 1.7 1.55 2.0 1.8 3.0 2.3 VCE = 2 V, IC = 1 mA 0.5 .94 0.8 1.1 1.0 1.25 1.5 1.55 2.0 1.94 3.0 2.65 VCE = 2 V, IC = 5 mA 0.5 1.2 0.8 1.32 1.0 1.47 1.5 1.63 2.0 1.82 3.0 2.17 VCE = 3 V, IC = 5 mA 0.5 0.8 1.0 1.5 2.0 3.0 1.25 1.35 1.41 1.58 1.81 2.29
18.5 16.4 15.2 14.5 11.0 16.8 14.8 13.8 11.4 9.6 7.0 23.0 20.3 18.8 15.8 13.0 9.8 24.2 20.7 18.8 15.2 13.7 12.0
0.53 0.47 0.43 0.39 0.3 0.72 0.66 0.63 0.56 0.5 0.46 0.49 0.44 0.42 0.39 0.33 0.25 0.5 0.45 0.44 0.41 0.34 0.29
79 95 111 132 177 41 65 79 104 138 -173 37 62 76 98 126 173 37 62 78 97 126 164
0.27 0.13 0.19 0.16 0.10 0.52 0.44 0.39 0.31 0.17 0.07 0.38 0.27 0.30 0.23 0.18 0.10 0.39 0.26 0.29 0.24 0.20 0.09
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
200
50
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = 2 V
Total Power Dissipation, PT (mW)
Collector Current, IC (mA)
40
30
100
20
10
0 0 50 100 150
0 0.5 1.0
Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
25
Base to Emitter Voltage, VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT
500
Collector Current, IC (mA)
DC Current Gain, hFE
20 200 µA 180 µA 160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 5 40 µA IB = 20 µA 0
200 VCE = 2 V 100
15
50 VCE = 1 V
10
20
10
Collector to Emitter Voltage, VCE (V)
1.0
2.0
3.0
1
2
5
10
20
50
100
Collector Current, IC (mA)
NE696M01 TYPICAL PERFORMANCE CURVES (TA = 25 °C)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
30.0m
DC CURRENT GAIN vs. COLLECTOR CURRENT
150.0
Collector Current, IC (mA)
DC Current Gain, hFE (mA)
IC
HFE
2.00m /div
10.0 /div
0.00 0.00 VCE (V) 500m /div 6.00
50.0 0.00 IC (A) 2.00m /div 30.0m
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE696M01 VCE = 1 V, IC = 5 mA
FREQUENCY (GHz) 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.40 1.60 1.80 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 Note: 1. Gain Calculation:
MAG = |S21| |S12|
S11 MAG 0.728 0.684 0.639 0.594 0.556 0.522 0.492 0.442 0.406 0.380 0.362 0.353 0.351 0.360 0.377 0.397 0.451 0.498 0.538 0.567 0.587 0.608 0.630 0.657 0.690 ANG -52.30 -64.20 -73.80 -83.40 -92.50 -100.70 -108.50 -123.40 -137.30 -150.60 -164.30 -176.70 167.30 152.60 138.80 127.30 107.70 93.20 82.30 74.10 67.30 61.10 55.20 49.10 42.90 MAG 10.962 10.349 9.557 8.885 8.236 7.644 7.116 6.242 5.522 4.931 4.452 4.047 3.606 3.248 2.942 2.676 2.251 1.930 1.690 1.509 1.361 1.229 1.091 0.949 0.818
S21 ANG 136.50 128.40 121.20 114.50 108.30 102.80 97.80 88.70 80.40 73.00 65.90 59.30 51.40 43.80 36.40 29.70 16.40 4.10 -7.90 -19.70 -31.50 -43.20 -54.40 -63.80 -70.40 MAG 0.040 0.046 0.052 0.056 0.059 0.062 0.063 0.067 0.069 0.070 0.072 0.074 0.075 0.077 0.079 0.081 0.085 0.092 0.101 0.113 0.127 0.141 0.155 0.164 0.171
S12 ANG 56.00 51.30 46.70 42.10 38.80 35.70 33.80 29.60 26.80 24.40 22.70 21.90 20.20 20.20 19.30 18.50 18.50 17.50 16.20 13.60 9.40 4.00 -1.40 -6.40 -9.20 MAG 0.832 0.779 0.732 0.687 0.647 0.615 0.587 0.542 0.509 0.485 0.469 0.459 0.451 0.449 0.453 0.458 0.477 0.496 0.513 0.532 0.555 0.593 0.637 0.678 0.719
S22 ANG -32.90 -39.10 -44.00 -48.50 -52.30 -55.70 -58.60 -64.10 -69.10 -73.40 -77.90 -81.80 -86.70 -91.40 -96.10 -100.50 -108.90 -118.00 -128.80 -142.40 -158.60 -175.70 168.60 157.90 154.80
K
MAG1 (dB) 24.378 23.521 22.643 22.005 21.449 20.909 20.529 19.692 19.032 18.478 16.304 15.018 13.695 12.702 11.872 11.110 9.936 8.980 8.216 7.622 7.107 6.870 6.778 7.057 6.798
0.303 0.338 0.398 0.463 0.522 0.579 0.640 0.748 0.860 0.976 1.069 1.151 1.270 1.353 1.417 1.475 1.530 1.515 1.460 1.371 1.283 1.175 1.077 1.009 0.911
(K ±
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
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