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Details, datasheet, quote on part number:NE698M01-T1
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| Part: | NE698M01-T1 |
| Category: | Discrete => Transistors => Bipolar => RF => Microwave |
| Description: | NPN Epitaxial Silicon Transistor For Microwave High-gain Amplification |
| Company: | California Eastern Laboratories |
| Datasheet: | Download NE698M01-T1 datasheet File size : 62 kB |
| Request For quote: | Find where to buy NE698M01-T1
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Datasheet text preview:
PRELIMINARY DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURES
· · · · · HIGH fT: 17 GHz TYP at 2 V, 7 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
0.65 2.0 ± 0.2 1.3 2 1
NE698M01
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1 ± 0.1 1.25 ± 0.1
6 0.2 (All Leads) 5
T1E
3
4
DESCRIPTION
The NE698M01 is an NPN high frequency silicon epitaxial transistor (NE686) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE698M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations.
0.9 ± 0.1 0.7 0.15 - 0.05 0 ~ 0.1
+0.10
PIN CONNECTIONS 4. Emitter 1. Emitter 5. Emitter 2. Emitter 6. Collector 3. Base
Note: Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT CRE2 |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain at VCE = 2 V, IC = 7 mA Gain Bandwidth Product at VCE = 2 V, IC=7mA, f = 2.0GHz Feedback Capacitance at VCB = 2 V, IE=0, f=1 MHz Insertion Power Gain at VCE = 2 V, IC = 7 mA, f = 2.0 GHz Noise Figure at VCE = 2 V, IC = 1 mA, f = 2.0 GHz GHz pF dB dB 13 UNITS µA µA 70 17 0.1 15.5 1.1 1.8 0.15 MIN NE698M01 M01 TYP MAX 0.1 0.1 140
Notes: 1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
California Eastern Laboratories
NE698M01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCBO VCEO VEBO IC PT TJ T STG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 5 3 2 10 30 150 -65 to +150
ORDERING INFORMATION
PART NUMBER NE698M01-T1 ORDER MULTIPLE 3000 PACKAGING Tape & Reel
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
50
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
50 VCE = 2 V
Total Power Dissipation, PT (mW)
Collector Current, Ic (mA)
150
40
40
30 mW 30
30
20
20
10
10
0
50
100
0
0.5
1.0
Ambient Temperature, TA (°C) (V)
Base to Emitter Voltage, VBE (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
25
500
DC CURRENT GAIN vs. COLLECTOR CURRENT
Collector Current, IC (mA)
20 200 µA 180 µA 160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 5 40 µA IB = 20 µA 0 1.0 2.0 3.0
10 1 2 5 10 20 30
DC Current Gain, hFE
200 VCE = 2 V 100
15
10
50 VCE = 1 V
20
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
NE698M01 TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT vs. Ic CHARACTERISTICS
20 VCE = 2 V f = 2 GHz 18
INSERTION POWER GAIN vs. IC CHARACTERISTICS
VCE = 2 V f = 2 GHz
Gain Bandwidth Product, fT (GHz)
Insertion Power Gain, |S21E|2 (dB)
1 10 20
16 14 12 10 8 6 4 2 0 1
10
0
10
20
Collector Current, Ic (mA)
Collector Current, Ic (mA)
NOISE FIGURE vs. Ic CHARACTERISTICS
4
0.3
FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Noise Figure, NF (dB)
3
Feedback Capacitance, CRE (pF)
20
VCE = 2 V f = 2 GHz
0.2
2
0.1
1
0 1 10
0 1 10 20
Collector Current, Ic (mA)
Collector to Base Voltage, VCB (V)
INSERTION POWER GAIN vs. FREQUENCY CHARACTERISTICS
40 VCE = 2 V
Insertion Power Gain, IS21E|2 (dB)
30
Ic = 7 mA 20
10
Ic = 1 mA 0 0.1 0.5 1.0 2.0 2.6
Frequency, f (GHz)
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