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Details, datasheet, quote on part number:NE721S01-T1B
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| Part: | NE721S01-T1B |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs => GaAs |
| Description: | General Purpose L to X-band GAAS MesFET |
| Company: | California Eastern Laboratories |
| Datasheet: | Download NE721S01-T1B datasheet File size : 34 kB |
| Request For quote: | Find where to buy NE721S01-T1B
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Datasheet text preview:
GENERAL PURPOSE L TO X-BAND GaAs MESFET
FEATURES
· HIGH POWER GAIN: 7 dB TYP at 12 GHz · HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz · LG = 0.8 µm, WG = 330 µm · LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz · LOW COST PLASTIC PACKAGE
2
NE721S01
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S01
2.0 ± 0.2
2.
1
J
3 0.65 TYP. 1.9 ± 0.2 1.6
4
DESCRIPTION
The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated with an epitaxial process resulting in excellent phase noise in oscillator applications up to 14 GHz. NEC's latest high performance/ low cost plastic packaging technology make the NE721S01 suitable for GPS, TVRO, DBS, PRD and other commercial applications.
1. Source 2. Drain 3. Source 4. Gate
0.125 ± 0.05
0.4 MAX 4.0 ± 0.2
Part Number Designator (Letter). When the letter is upright, the gate lead is to the right.
ORDERING INFORMATION
PART NUMBER NE721S01-T1 NE721S01 NE721S01-T1B QTY 1K/Reel Bulk up to 4K 4K/Reel PACKAGE S01 S01 S01 LEAD LENGTH 1.0 mm 1.0 mm 1.0 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOL PN GS P1dB IDSS VP gm IGSO R TH PARAMETERS AND CONDITIONS Phase Noise at VDS = 3 V, ID = 30 mA, f = 12 GHz, 100 KHz offset Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 3 V, IDS = 30 mA Saturated Drain Current at VDS = 3 V, VGS = 0 Pinch Off Voltage at VDS = 3 V, ID = 100 µA Transconductance at VDS = 3 V, ID = 10 mA Gate to Source Leak Current at VGS = -5 V Thermal Resistance UNITS dBc/Hz dB dBm mA V mS µA °C/W 30 -4.0 20 MIN NE721S01 S01 TYP -110 7.0 15.0 60 -2.0 40 1.0 10 300 100 -0.5 MAX
California Eastern Laboratories
1.5 MAX
2.0 ± 0.2
0.5 TYP.
0 ± 0. 2
NE721S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS V DS VGDO V GSO IDS TCH T STG PT PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V V mA °C °C mW RATINGS 5 -6 -6 IDSS 125 -65 to +125 250
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
500
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
100
Total Power Dissipation, PT (mW)
Drain Current, ID (mA)
400
80 VGS = 0 V 60
300
200
40
VGS = -0.5 V
100
20
VGS = -1.0 V
0
50
100
150
200
250
0
1
2
3
4
5
Ambient Temperature, TA
(°C)
Drain to Source Voltage, VDS (V)
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
-80
BASE BAND 1/f NOISE vs. OFFSET FREQUENCY
VDS = 3 V, IDS = 30 mA
80
VDS = 3 V
Base Band 1/f Noise, dBv/Hz
-90 -100 -110 -120 -130 -140 -150 -160
Drain Current, ID (mA)
60
40
20
0 -4.0 -2.0 0
0.1
1
10
100
Gate to Source Voltage, VGS (V)
Offset Frequency, kHz
NE721S01 TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VDS = 3 V, ID = 10 mA
FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG .936 .877 .813 .743 .691 .649 .639 .659 .683 .710 .748 .776 .805 .839 .859 .858 .877 .874 .875 S11 ANG -48.8 -71.9 -95.7 -119.4 -144.7 -174.6 158.2 136.5 115.8 95.8 78.1 64.2 53.9 45.8 36.4 25.5 18.5 13.8 10.1 MAG 2.501 2.387 2.271 2.153 2.063 1.931 1.765 1.609 1.480 1.351 1.215 1.073 .954 .837 .722 .614 .522 .449 .392 S21 ANG 135.8 115.2 95.2 75.6 56.5 36.8 18.4 1.2 -15.7 -32.9 -49.8 -65.3 -79.8 -93.9 -106.6 -118.9 -130.0 -140.1 -148.3 MAG .070 .096 .115 .127 .135 .136 .129 .122 .117 .113 .107 .102 .101 .103 .104 .100 .100 .101 .098 S12 ANG 57.1 41.9 26.4 12.5 -1.1 -14.2 -24.8 -33.4 -39.8 -46.8 -52.8 -54.7 -59.5 -61.9 -67.1 -70.8 -77.8 -82.2 -85.0 MAG .700 .662 .619 .568 .518 .448 .370 .305 .257 .234 .226 .235 .288 .388 .485 .576 .628 .675 .724 S22 ANG -26.5 -40.8 -53.4 -66.2 -77.4 -86.4 -95.5 -111.4 -132.8 -159.5 -173.4 143.9 113.0 89.1 75.7 66.0 55.5 45.9 36.4
VDS = 3 V, IDS = 20 mA
FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG .925 .858 .786 .715 .662 .625 .622 .647 .675 .703 .742 .776 .806 .833 .859 .855 .876 .871 .866 S11 ANG -51.4 -75.6 -100.2 -124.5 -150.4 179.8 153.4 132.5 112.7 93.2 76.3 62.7 52.7 44.8 35.4 24.7 17.9 12.7 9.2 MAG 2.988 2.819 2.641 2.472 2.335 2.155 1.950 1.773 1.625 1.480 1.332 1.178 1.051 .925 .804 .686 .586 .509 .446 S21 ANG 134.5 113.5 93.4 73.9 55.0 35.8 17.9 1.4 -15.1 -31.8 -48.4 -63.7 -77.6 -91.5 -104.2 -116.6 -127.6 -138.1 -147.2 MAG .064 .087 .102 .112 .118 .117 .111 .109 .106 .107 .105 .105 .108 .108 .112 .109 .108 .108 .102 S12 ANG 56.9 41.3 26.7 13.6 1.7 -10.9 -19.1 -26.1 -30.7 -36.3 -41.6 -45.5 -50.7 -54.8 -59.3 -65.3 -74.0 -77.0 -81.9 MAG .676 .636 .591 .540 .493 .425 .352 .286 .236 .212 .204 .212 .266 .360 .458 .553 .610 .655 .703 S22 ANG -26.8 -40.9 -53.1 -65.4 -75.9 -84.3 -92.9 -107.5 -128.9 -156.0 175.1 143.6 111.8 88.4 75.1 65.9 55.5 46.0 36.8
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