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Details, datasheet, quote on part number:NE72218
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| Part: | NE72218 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs => GaAs |
| Description: | C to X Band N-channel GAAS MesFET |
| Company: | California Eastern Laboratories |
| Datasheet: | Download NE72218 datasheet File size : 34 kB |
| Request For quote: | Find where to buy NE72218
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Datasheet text preview:
C TO X BAND N-CHANNEL GaAs MESFET
NE72218
FEATURES
· · · · · · HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz GATE LENGTH: LG = 0.8 µm (recessed gate) GATE WIDTH: WG = 400 µm 4 PIN SUPER MINI MOLD: (SOT-343) TAPE & REEL PACKAGING
PACKAGE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 18
2.1 ± 0.2 1.25 ± 0.1
+0.10 0.3 -0.05
V57
2.0 ± 0.2
1.25
0.65 0.60
2
3 0.65
1.3 0.65
1
4
DESCRIPTION
The NE72218 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance, reliability and uniformity. The NE72218 is housed in a 4 pin super mini mold package, making it ideal for high density design. NEC's stringent quality assurance and test procedures ensure the highest reliability performance.
+0.10 0.4 -0.05
0.3
0.9 ± 0.1
PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain
0 to 0.1
+0.10 0.15 -0.05
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS Gs P 1dB PN gm IDSS VGS (OFF) IGSO PARAMETERS AND CONDITIONS Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz Output Power at 1 dB Gain Compression Point at VDS = 3 V, ID = 30 mA, f = 12 GHz Phase Noise at VDS = 3 V, ID = 30 mA, f = 11 GHz, 10 KHz offset Transconductance at VDS = 3 V, ID = 30 mA Saturated Drain Current at VDS = 3 V, VGS = 0 V Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA Gate to Source Leakage Current at VGS = -5 V dBm dBc/Hz mS mA V µA 20 30 -0.5 15.0 -110 -90 45 60 -2.0 1.0 120 -4.0 10 Phase Noise at VDS = 3 V, ID = 30 mA, f = 11 GHz, 100 KHz offset dBc/Hz UNITS dB MIN NE72218 18 TYP 5.0 MAX
California Eastern Laboratories
NE72218 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS V DS VGS V GD ID TCH T STG PT PARAMETERS Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V V IDSS °C °C mW RATINGS 5.0 -5.0 -5.0 mA 125 -65 to +125 250 NE72218-T1 3 Kpcs/Reel 8-mm wide embossed tape, pin 1 (Source), pin 2 (Gate) face perforated side of tape.
ORDERING INFORMATION
PART NUMBER NE72218 QUANTITY Bulk PACKAGE STYLE 8-mm wide embossed tape, pin 3 (Source), pin 4 (Drain) face perforated side of tape.
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage.
IDSS CLASSIFICATION
RANK 57 58 IDSS (mA) 30 to 120 65 to 120 30 to 75 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
100
MARKING V57 V58 V59
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
300
59
Total Power Dissipation, PT (mW)
Drain Current, ID (mA)
80 VGS = 0 V
200
60
40 VGS = -0.5 V 20 VGS = -1.0 V
100
0
1
2
3
0
50
100
150
4
5
Ambient Temperature, TA (°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
-80
Drain to Source Voltage, VDS (V) BASE BAND 1/f NOISE vs. OFFSET FREQUENCY
VDS = 3 V, IDS = 30 mA
VD S = 3 V
Base Band 1/f Noise, dBv/Hz
80
-90 -100 -110 -120 -130 -140 -150
Drain Current, ID (mA)
60
40
20
0 -4.0 -2.0 0
-160 0.1 1 10 100
Gate to Source Voltage, VGS (V)
Offset Frequency, kHz
NE72218 NE72218 NONLINEAR MODEL
SCHEMATIC
CGD_PKG 0.003pF LD Q1 LG_PKG GATE 0.55nH 0.48nH CDS_PKG CGS_PKG 0.12pF LS 0.22nH 0.15pF CDX 0.02pF LG 0.82nH LD_PKG DRAIN 0.1nH
CGX 0.15pF
LS_PKG 0.05nH
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -1.34 0 2.5 0.04 0.07 0.03 2 0.3 1 1e-14 1.3 0 0 4e-12 0.27e-12 5000 1e-10 0.85e-12 0.055e-12 0.3 0.3 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 10 4 4 0 2e-10 1.5 27 3 1.43 0 0 1
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
MODEL RANGE Frequency: 0.5 to 18 GHz Bias: VDS = 2 V to 4 V, ID = 10 mA to 40 mA IDSS = 55 mA @ VGS = 0, VDS = 3 V Power: VDS = 3 V, ID = 30 mA, 4 GHz Date: 4/98
(1) Series IV Libra TOM Model
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