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Details, datasheet, quote on part number:NE73430
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| Part: | NE73430 |
| Category: | Discrete => Transistors => Bipolar => General Purpose |
| Description: | NPN Silicon General Purpose Transistor |
| Company: | California Eastern Laboratories |
| Datasheet: | Download NE73430 datasheet File size : 40 kB |
| Request For quote: | Find where to buy NE73430
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Datasheet text preview:
NPN SILICON GENERAL PURPOSE TRANSISTOR
FEATURES
· LOW NOISE FIGURE: < 3 dB at 500 MHz · HIGH GAIN: 15 dB at 500 MHz · HIGH GAIN BANDWIDTH PRODUCT: 2 GHz (3 GHz for the NE73435) · SMALL COLLECTOR CAPACITANCE: 1 pF
· HIGH RELIABILITY METALLIZATION 30 (SOT 323 STYLE)
NE734 SERIES
35 (MICRO-X)
DESCRIPTION
The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NEC's highly reliable platinum-silicide, titanium, platinum, and gold metallization system to assure uniform performance and reliability. The NE73433 is in the plastic Mini-Mold package designed for high-speed automated assembly operations for large volume hybrid ICs. For hybrid MIC applications requiring more performance, the NE73435 is recommended. This device is packaged in the economical metal-ceramic, hermetic Micro-X package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 5 mA Minimum Noise Figure2 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz VCE = 10 V, IC = 5 mA, f = 0.9 GHz Maximum Available Gain3 at VCE = 10 V, IC = 10 mA, f = 0.5 GHz f = 1 GHz Insertion Power Gain at VCE = 10 V, IC = 10 mA, f = 0.5 GHz f = 1 GHz Forward Current Gain Ratio at VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 5 mA Collector Cutoff Current at VCB = 15 V, IE = 0 Emitter Cutoff Current at VEB = 2 V, IC = 0 Collector to Base Capacitance4 at VCB = 10 V, IC = 0 mA, f = 1 MHz Total Power Dissipation Thermal Resistance (Junction to Case) µA µA pF mW ° C/W 1.5 0.75 150 833 .55 UNITS GHz GHz dB dB dB dB dB dB MIN NE73430 2SC4185 30 TYP MAX MIN 1.5 2.3 2.1 4.0 17 18 13 16 9 100 200 0.1 0.1 1.5 250 550 3.5 NE73435 2SC2148 35 TYP 3.0 MAX
NFMIN
MAG
|S21E|2
8
8 25
hFE
40
100
180 0.1
ICBO IEBO CCB PT R TH
Notes: 1. Electronic Industrial Association of Japan. 2. Input and output are tuned for optimum noise figures. 3. Maximum Available Gain (MAG) is calculated
MAG = |S21| |S12|
(K ±
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
4. CCB measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal.
California Eastern Laboratories
NE734 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCBO VCEO V EBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Junction Temperature Storage Temperature UNITS V V V mA °C °C RATINGS 30 14 3 50 2002 -65 to +2003
NE73435 TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ. (MHz) 500 1000 1500 2000 NFOPT (dB) 2.0 3.1 4.2 5.1 GA (dB) 16.1 11.2 9.2 7.1 OPT MAG 0.30 0.43 0.54 0.56 ANG 80 126 168 178 Rn/50 0.63 0.33 0.19 0.20
VCE = 10 V, IC = 3 mA
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Maximum Junction Temperature for the NE73430 is 150°C. 3. Maximum Storage Temperature for the NE73430 and the NE73435 Grade D is 150°C.
VCE = 10 V, IC = 15 mA 500 1000 1500 2000 3.3 4.7 6.5 7.4 17.5 13.5 10.8 9.2 0.34 0.47 0.67 0.64 120 168 -174 -163 0.36 0.27 0.13 0.46
TYPICAL PERFORMANCE CURVES (TA = 25°C)
SATURATION VOLTAGE vs. COLLECTOR CURRENT
2
500
DC CURRENT GAIN vs. COLLECTOR CURRENT
Collector to Emitter and Base to Emitter Saturation Voltage VCE (SAT), VBE (SAT) (V)
VBE(SAT) 1 0.7 0.5 0.3 0.2 IC = 10XIB
DC Forward Current Gain, hFE
300 200 VCE = 10 V 100 70 VCE = 1 V 50 30 20
0.1 0.07 0.05 0.03 0.02 0.1 0.2 0.5 1 2 5 10 20 50 VCE(SAT)
10 0.5 0.7 1 2 3 5 7 10 20 30 50
Collector Current, IC (mA)
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
10 7 5 3 2 VCE = 10 V NE73435
Gain Bandwidth Product, fT (GHz)
1 0.7 0.5 0.3 0.2 0.1 0.5 0.7 1 2 3 57 10 20 30 50
Collector Current, IC (mA)
NE734 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE73435 GAIN vs. FREQUENCY
32 VCE = 10 V IC = 30 mA
NE73435 NOISE FIGURE vs. COLLECTOR CURRENT
6 VCE = 10 V f = 500 MHz 5
MAG
Noise Figure, NF (dB)
24
Gain, (dB)
|S21E| 2 16
4
3
8
2 NE73435 TUNED
0 0.1 0.2 0.3 0.5 0.7 1 2 3 5
1 0.5 0.7 1 2 3 5 7 10 20 30 50
Frequency, f (GHz)
Collector Current, IC (mA)
ORDERING INFORMATION
PART NUMBER NE73430-T1 NE73435 Note: 1. Embossed tape 12 mm wide. QUANTITY 3000 1 PACKAGING Tape & Reel ESD Bag
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