· LOW NOISE FIGURE: at 1 GHz· HIGH COLLECTOR CURRENT: 100 mA· HIGH RELIABILITY METALLIZATION· LOW COST
Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB)
rs DESCRIPTION si ng heet PL llo as Th his ded fo office t from mmen sales l o rec se cal a Ple ils: a det R NE8
NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride passivated base surface process. The NE856 series is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles.
(TO-92) 34 (SOT 89 STYLE) 18 (SOT 343 STYLE) NE85600 NOISE FIGURE AND GAIN vs. FREQUENCY 30 (SOT 323 STYLE) 33 (SOT 23 STYLE)
Frequency, f (GHz) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
PART NUMBER NE85632 EIAJ1 REGISTERED NUMBER 2SC4226 2SC3355 PACKAGE OUTLINE 00 (CHIP) SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at GHz 7.0 6.5 VCE 20 mA VCE 7 mA GHz 4.5 NF Noise Figure at VCE = 7 mA, = 1 GHz dB VCE = 7 mA, = 2 GHz GA Associated Gain at VCE = 7 mA, = 1 GHz = 2 GHz Insertion Power Gain at VCE = 20 mA, = 1 GHz = 2 GHz Forward Current Gain2 at VCE 20 mA VCE 7 mA Collector Cutoff Current at VCB 0 mA Emitter Cutoff Current at VEB 0 mA Feedback Capacitance3 at VCB = 0 mA, = 1 MHz VCB = 0 mA, = 1 MHz Total Power Dissipation Thermal Resistance (J-A) pF mW °C/W
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE 20 mA Noise Figure at VCE = 7 mA, = 1 GHz = 2 GHz Associated Gain at VCE = 7 mA, = 1 GHz = 2 GHz Insertion Power Gain at VCE = 20 mA, = 1 GHz = 2 GHz Forward Current Gain2 at VCE 20 mA Collector Cutoff Current at VCB 0 mA Emitter Cutoff Current at VEB 0 mA Feedback Capacitance3 at VCB = 0 mA, = 1 MHz Total Power Dissipation Thermal Resistance 33 34 MIN TYP MAX MIN TYP MAX pF mW °C/W 35 39 MIN TYP MAX MIN TYP MAX
Notes: 1. Electronic Industrial Association of Japan. 2. Pulse width 350 s, duty cycle 2% pulsed. 3. Cre measurement employs a three terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal. 4. With 0.7 mm ceramic substrate (infinite heatsink).
SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Junction Temperature Storage Temperature UNITS mA °C RATINGS to +150
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Maximum TJ for the NE85600 and is 200°C.
COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE