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Details, datasheet, quote on part number:UPA821TF-T1
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Datasheet text preview:
PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
FEATURES
· · · LOW NOISE: NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA HIGH GAIN: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA SMALL PACKAGE STYLE: 2 NE856 die in a 2 mm x 1.25 mm x 0.6 mm package
2.0 ± 0.2 1.3 2 1
UPA821TF
OUTLINE DIMENSIONS (Units in mm)
Package Outline TS06
2.1 ± 0.1 1.25 ± 0.1
0.65
6 0.22 - 0.05 (All Leads)
+0.10
R81
5
3
4
DESCRIPTION
The UPA821TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The thinner package style allows for higher density designs.
0.6 ± 0.1
0.45 0 ~ 0.1
0.13 ± 0.05
PIN CONFIGURATION (Top View)
B1 E2 B2
6
5
4
Q1 1 2
Q2 3
PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1)
C1
E1
C2
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE fT Cre |S21E|2 NF hFE1/hFE2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz hFE ratio, VCE = 3 V, Ic = 7 mA hFE1 = Smaller hFE value between Q1 and Q2 hFE2 = Larger hFE value between Q1 and Q2 Notes: 1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter. GHz pF dB dB 0.85 7 UNITS µA µA 70 3.0 4.5 0.7 9 1.2 1.0 2.5 1.5 MIN UPA821TF TS06 TYP MAX 1.0 1.0 140
California Eastern Laboratories
UPA821TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die2 Junction Temperature Storage Temperature UNITS V V V mA mW mW °C °C RATINGS 20 12 3 100 150 200 150 -65 to +150
TJ T STG
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
20
COLLECTOR CURRENT vs. DC BASE VOLTAGE
VCE = 3 V
Total Power Dissipation, PT (mW)
em
en
ts
Pe
in
rE
lem
To t
al
en
Collector Current, lc (mA)
200
2
El
t
10
100
0
50
100
150
0
0.5
1.0
Ambient Temperature, TA (°C)
DC Base Voltage, VBE (V)
COLLECTOR CURRENT vs. EMITTER VOLTAGE
25 lB=160 µA 140 µA
5.0
DC CURRENT GAIN vs. COLLECTOR CURRENT
f = 1 MHz 2.0
Collector Current, lc (mA)
20 120 µA 15 100 µA 80 µA 10 60 µA 40 µA 5 20 µA
DC Current Gain,hFE
10
1.0
0.5
0.2
0.1
0
5
1
2
5
10
20
50
Collector to Emitter Voltage, VCE (V)
Collector Current, lc (mA)
UPA821TF TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
20
INSERTION POWER GAIN vs. COLLECTOR CURRENT
15
10
Insertion Power Gain, |S21E|2 (dB)
Gain Bandwidth Product, fT (GHz)
VCE = 3 V f = 1 GHz
VCE = 3 V f = 1 GHz
10
5
5
2
1 0.5 1 5 10 50
0 0.5 1 5 10 50 100
Collector Current, lc (mA)
Collector Current, lc (mA)
NOISE FIGURE vs. COLLECTOR CURRENT
6 24
INSERTION POWER GAIN vs. FREQUENCY Insertion Power Gain, |S21E|2 (dB)
VCE = 3 V lc = 7 mA 20
VCE = 3 V f = 1 GHz
Noise Figure, NF (dB)
4
16
12
2
8
4
0 0.5 1.0 5.0 10 50 100
0 0.1 0.2 0.5 1.0 2.0 5.0
Collector Current, lc (mA)
Frequency, f (GHz)
FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
5.0 f = 1 MHz
Feedback Capacitance, CRE (pF)
2.0
1.0
0.5
0.2
0.1 1 2 5 10 20 50
Collector to Base Voltage, VCB (V)
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