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Details, datasheet, quote on part number:UPA826TF-T1
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Datasheet text preview:
PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA826TF
FEATURES
· · · · LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package
OUTLINE DIMENSIONS (Units in mm)
Package Outline TS06 (Top View)
2.1 ± 0.1 1.25 ± 0.1
0.65 2.0 ± 0.2 1.3
1
6 0.22 - 0.05 (All Leads)
+0.10
2
5
DESCRIPTION
The UPA826TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications. This device is suitable for very low voltage/low current, and low noise applications. The thinner package style allows for higher density designs.
3
4
0.6 ± 0.1
0.45 0 ~ 0.1
0.13 ± 0.05
PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1)
Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE fT Cre |S21E|2 NF hFE1/hFE2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 10 mA GHz pF dB dB 0.85 7 Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz hFE Ratio, VCE = 3 V, Ic = 10 mA hFE1 = Smaller hFE value between Q1 and Q2 hFE2 = Larger hFE value between Q1 and Q2 Notes: 1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. UNITS µA µA 75 110 12 0.4 8.5 1.5 1.0 2.5 0.7 MIN UPA826TF TS06 TYP MAX 0.1 0.1 150
California Eastern Laboratories
UPA826TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Element 2 Elements2 Junction Temperature Storage Temperature UNITS V V V mA mW mW °C °C RATINGS 9 6 2 30 150 200 150 -65 to +150
TJ T STG
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
50 VCE = 3 V
COLLECTOR CURRENT vs. DC BASE VOLTAGE
Total Power Dissipation, PT (mW)
Free Air 200
2 El em en
ts
Collector Current, lc (mA)
40
in
30
To t
Pe
al
rE
100
lem
en
t
20
10
0
50
100
150
0
0.5
1.0
Ambient Temperature, TA (°C)
DC Base Voltage, VBE (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
60 500 µA 50
200
DC CURRENT GAIN vs. COLLECTOR CURRENT
Collector Current, lc (mA)
DC Current Gain, hFE
400 µA 40 300 µA 30 200 µA 20 lB=100 µA 10
5V VCE = 3 V 100
0
0
1
2
3
4
5
6
0.1 0.2
0.5
1
2
5
10
20
50 100
Collector to Emitter Voltage, VCE (V)
Collector Current, lc (mA)
UPA826TF TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
14
INSERTION POWER GAIN vs. COLLECTOR CURRENT
10
f = 2 GHz 5V
Gain Bandwidth Product, fT (GHz)
Insertion Power Gain, |S21E|2 (dB)
f = 2 GHz 5V 8 3V
12
10
3V
8
6
VCE = 1 V
VCE = 1 V
6
4
4
2 0.5 1 2 5 10 20 50
2 1 2 5 10 20 50
Collector Current, lc (mA)
Collector Current, lc (mA)
NOISE FIGURE vs. COLLECTOR CURRENT
4
FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
0.6 f = 1 MHz
Feedback Capacitance, Cre (pF)
VCE = 3 V f = 2 GHz
Noise Figure, NF (dB)
3
0.5
2
0.4
1
0.3
0 0.5 1 2 5 10 20 50
0.2 0.5 1 2 5 10 20
Collector Current, lc (mA)
Collector to Base Voltage, VCB (V)
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