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Details, datasheet, quote on part number:UPA829TF
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| Part: | UPA829TF |
| Category: | Discrete => Transistors => Bipolar => RF => Amplifier |
| Description: | NPN Silicon High Frequency Transistor |
| Company: | California Eastern Laboratories |
| Datasheet: | Download UPA829TF datasheet File size : 16 kB |
| Request For quote: | Find where to buy UPA829TF
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Datasheet text preview:
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
· · · SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm LOW HEIGHT PROFILE: Just 0.60 mm high HIGH COLLECTOR CURRENT: IC MAX = 100 mA
0.65 2.0 ± 0.2 1.3 2
Q2
UPA829TF
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE TS06
2.1 ± 0.1 1.25 ± 0.1
Q1
DESCRIPTION
The UPA829TF contains two NE688 NPN high frequency silicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/ buffer amplifier and other applications.
1
6 0.22 - 0.05 (All Leads)
+0.10
5
3
4
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS V CBO V CEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die Junction Temperature Storage Temperature UNITS V V V mA mW mW °C °C RATINGS 9 6 2 100 110 200 150 -65 to +150 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1)
0 ~ 0.1 0.6 ± 0.1 0.45 0.13 ± 0.05
TJ T STG
Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE fT Cre |S21E|2 NF hFE1/hFE2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain1 at VCE = 1 V, IC = 3 mA GHz pF dB dB 0.85 Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz Feedback Capacitance2 at VCB = 1 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 UNITS µA µA 80 110 9.0 0.75 6.5 1.5 0.85 MIN UPA829TF TS06 TYP MAX 0.1 0.1 160
Notes: 1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA829TF-T1, 3K per reel.
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES · Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393 · FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) · Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 2/99
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