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Details, datasheet, quote on part number:UPA831TC
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| Part: | UPA831TC |
| Category: | Discrete => Transistors => Bipolar => RF => Amplifier |
| Description: | NPN Silicon Epitaxial Twin Transistor |
| Company: | California Eastern Laboratories |
| Datasheet: | Download UPA831TC datasheet File size : 17 kB |
| Request For quote: | Find where to buy UPA831TC
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Datasheet text preview:
PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
FEATURES
· SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package LOW HEIGHT PROFILE: Just 0.55 mm high FLAT LEAD STYLE: Reduced lead inductance improves electrical performance TWO DIFFERENT DIE TYPES: Q1 - Ideal oscillator transistor Q2 - Ideal buffer amplifier transistor
1 1.50±0.1 0.96 0.48 3 0.48 2
UPA831TC
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TC (TOP VIEW)
1.50±0.1 1.10±0.1
· ·
0.20 +0.1
-0.05
6
·
5
4
PIN OUT 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1)
DESCRIPTION
The UPA831TC contains one NE856 and one NE681 NPN high frequency silicon bipolar chip. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.
0.55±0.05
0.11+0.1
-0.05
Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 7 mA GHz pF dB dB µA µA 70 GHz pF dB dB 10 12 1.4 2.7 4.5 7.0 0.9 7 Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Feedback Capacitance2 at VCB = 3 V, lE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz UNITS µA µA 70 3.0 4.5 0.7 9 1.2 2.5 0.8 0.8 150 1.5 MIN UPA831TC TC TYP MAX 1 1 140
Q1
fT Cre |S21E|2 NF ICBO IEBO hFE
Q2
fT Cre |S21E|2 NF
Notes: 1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter.
California Eastern Laboratories
UPA831TC ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCBO VCEO VEBO IC PT TJ T STG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation1 Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS Q1 20 12 3 100 Q2 20 10 1.5 65
ORDERING INFORMATION
PART NUMBER UPA831TC-T1 QUANTITY 3000 PACKAGING Tape & Reel
TBD TBD TBD 150 150 -65 to +150
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES · Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393 · FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) · Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 1/99
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