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Details, datasheet, quote on part number:UPA832TF-T1
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Datasheet text preview:
PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA832TF
FEATURES
· LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA · HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2: |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 10 mA · · 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE856, Q2: NE685)
OUTLINE DIMENSIONS (Units in mm)
Package Outline TS06 (Top View)
2.1 ± 0.1 1.25 ± 0.1
0.65 2.0 ± 0.2 1.3
1
6 0.22 - 0.05 (All Leads)
+0.10
2
5
3
4
0.6 ± 0.1
0.45 0 ~ 0.1
0.13 ± 0.05
DESCRIPTION
The UPA832TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device for high dynamic range with excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.
PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1)
Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE Q1 fT Cre |S21E|2 NF ICBO IEBO hFE Q2 fT Cre2 |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 10 mA GHz pF dB dB 7 Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz GHz pF dB dB µA µA 75 12 0.4 8.5 1.5 2.5 0.7 7 UNITS µA µA 100 3.0 4.5 0.7 9 1.2 2.5 0.1 0.1 150 1.5 MIN UPA832TF TS06 TYP MAX 1 1 145
Notes: 1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter.
California Eastern Laboratories
UPA832TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCBO VCEO VEBO IC PT TJ T STG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS Q1 20 12 3 100 Q2 9 6 2 30
150 150 2002 150 150 -65 to +150
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Total Power Dissipation, PT (mW)
Free Air
Q2 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
Free Air
2 elements in total 200
2 elements in total 200
Q1 when using 1 element
Q2 when using 1 element
Q1 when using 2 elements 100
Q2 when using 2 elements 100
0
50
100
150
0
50
100
150
Ambient Temperature, TA (°C)
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
20 VCE = 3 V 40 50
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = 3 V
Collector Current, lc (mA)
Collector Current, lc (mA)
0.5 1.0
30
10
20
10
0
0
0.5
1.0
Base to Emitter Voltage, VBE (V)
Base to Emitter Voltage, VBE (V)
UPA832TF TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
25 lB=160 µA 140 µA 60 500 µA 50
Q2 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
Collector Current, lc (mA)
20 120 µA 15 100 µA 80 µA 10 60 µA 40 µA 5 20 µA
Collector Current, lc (mA)
400 µA 40 300 µA 30 200 µA 20 lB=100 µA 10
0
5
10
0
1
2
3
4
5
6
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs. COLLECTOR CURRENT
200 VCE = 3 V
200
DC CURRENT GAIN vs. COLLECTOR CURRENT
DC Current, Gain hFE
DC Current, Gain hFE
100
5V VCE = 3 V 100
50
20
10 0.5 5 10 50
0 0.1 0.2 0.5 1 2 5 10 20 50 100
Collector Current, lc (mA)
Collector Current, lc (mA)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
20 14
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
f = 2 GHz 5V
Gain Bandwidth Product, fT (GHz)
Gain Bandwidth Product, fT (GHz)
VCE = 3 V f = 1.0 GHz 10
12
10
3V
5
8
VCE = 1 V
6
2
4
1 0.5 1 5 10 50
2 0.5 1 2 5 10 20 50
Collector Current, lc (mA)
Collector Current, lc (mA)
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