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Details, datasheet, quote on part number:UPC2710T
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| Part: | UPC2710T |
| Category: | RF & Microwaves => Amplifiers => Small Signal Amplifiers |
| Description: | 1.5 GHZ Silicon Mmic Wide-band Amplifier |
| Company: | California Eastern Laboratories |
| Datasheet: | Download UPC2710T datasheet File size : 41 kB |
| Request For quote: | Find where to buy UPC2710T
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Datasheet text preview:
1.5 GHz SILICON MMIC UPC2710T WIDE-BAND AMPLIFIER
FEATURES
· FREQUENCY RESPONSE: 1.5 GHz · HIGH GAIN: 33 dB GAIN vs. FREQUENCY
35
· INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE · 5 V SINGLE SUPPLY VOLTAGE · SUPER SMALL PACKAGE · TAPE AND REEL PACKAGING OPTION AVAILABLE
Gain, GS (dB)
· SATURATED OUTPUT POWER: +13.5
30
25
20 0 0.5 1.0 1.5
Frequency, f (GHz)
DESCRIPTION
The UPC2710T is a Silicon Monolithic integrated circuit manufactured using the NESAT III process. This device is suitable for applications which require high gain and wide-band operation. It is designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/measurement equipment. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 0.5 GHz, VCC = 5 V)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS fU GS PSAT P 1dB NF R L IN RLOUT ISOL GT RTH PARAMETERS AND CONDITIONS Circuit Current (no signal) Small Signal Gain Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 0.1 GHz) Gain Flatness, f = 0.1 ~ 0.6 GHz f = 0.1 0.8 GHz Saturated Output Power Output Power at 1dB Compression Point Noise Figure Input Return Loss Output Return Loss Isolation Gain -Temperature Coefficient Thermal Resistance (Junction to Ambient) UNITS mA dB GHz dB dBm dBm dB dB dB dB dB/°C °C/W 3 9 34 11 MIN 16 30 0.7 UPC2710T T06 TYP 22 33 1.0 ±0.8 13.5 7.5 3.5 6 12 39 -0.006 200 5 MAX 29 36.5
California Eastern Laboratories
UPC2710T ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCC P IN PT TOP T STG PARAMETERS Supply Voltage Input Power Power Dissipation Operating Temperature Storage Temperature UNITS V dBm mW °C °C RATINGS 6 +10 2802 -40 to +85 -55 to +150
VCC 1000 pF
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC PARAMETER Supply Voltage UNITS V MIN 4.5 TYP MAX 5.0 5.5
TEST CIRCUIT
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85°C).
50 IN 1000 pF C1 1
C3 1000 nH 6
* *L
C2 50 OUT 1000 pF
4 2, 3, 5
TYPICAL PERFORMANCE CURVES (TA = 25°C)
CIRCUIT CURRENT vs. VOLTAGE
40 35
CIRCUIT CURRENT vs. TEMPERATURE
40 35
Circuit Current, ICC (mA)
30 25 20 15 10 5
Circuit Current, ICC (mA)
0 1 2 3 4 5 6
30 25 20 15 10 5
0
0 -60 -40 -20 0 20 40 60 80 100
Supply Voltage, VCC (V)
Operating Temperature, TOP (°C)
NOISE FIGURE AND INSERTION GAIN vs. FREQUENCY
35 6 VCC = 5.5 V
RETURN LOSS vs. FREQUENCY
0 VCC = 5.0 V
Input Return Loss, RLIN (dB) Output Return Loss, RLOUT (dB)
Insertion Power Gain, GP (dB)
RLIN -10
VCC = 4.5 V 30 NF VCC = 5.5 V
5
Noise Figure, NF (dB)
Gp
VCC = 5.0 V
RLOUT -20
-30
4 VCC = 4.5 V VCC = 5.0 V
-40
25 0.1 0.3 1.0 2.0
3
-50 0.1
0.3
1.0
2.0
Frequency, f (GHz)
Frequency, f (GHz)
UPC2710T TYPICAL PERFORMANCE CURVES (TA = 25° C)
ISOLATION vs. FREQUENCY
0 VCC = 5.0V -10
POWER vs. FREQUENCY
20
15 PSAT
x
Isolation, ISOL (dB)
-20
Power (dBm)
10 P1dB 5
-30
-40
0
-50 0.1 0.3 1.0 2.0
-5 0 0.5 1.0 1.5 2.0
Frequency, f (GHz)
Frequency, f (GHz) X: Typical SSB Third Order Intercept Point
OUTPUT POWER vs. INPUT POWER AND VOLTAGE
20 VCC = 5.5 V f = 0.5 GHz 15
OUTPUT POWER vs. INPUT POWER AND TEMPERATURE
20 15 VCC = 5.0 V f = 0.5 GHZ TA = 85° C
Output Power, POUT (dBm)
10 VCC = 5.0 V 5 VCC = 4.5 V 0
Output Power, POUT (dBm)
10 TA = -45° C TA = 25° C 5 0
-5 -10 -15 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10
-5
-10 -15 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10
Input Power, PIN (dBm)
Input Power, PIN (dBm)
NOISE FIGURE vs. FREQUENCY
6
Noise Figure, NF (dB)
5
4
3
2 0 0.5 1.0 1.5
Frequency, f (GHz)
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