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Details, datasheet, quote on part number:UPC2710TB
 
 
Part:UPC2710TB
Category:RF & Microwaves => Amplifiers => Small Signal Amplifiers
Description:5v, Super Minimold Medium Power Simmic Amplifier
Company:California Eastern Laboratories
Datasheet:Download UPC2710TB datasheet   File size : 52 kB
Request For quote:  Find where to buy UPC2710TB
 



Datasheet text preview:
5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER
FEATURES
· HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package · HIGH GAIN: 33 dB TYP · SATURATED OUTPUT POWER: +13.5 dBm · SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
35 VCC = 5.0 V
GAIN vs. FREQUENCY and TEMPERATURE
Gain, GS (dB)
TA = -40¡C TA = +25¡C 30 TA = +85¡C
DESCRIPTION
The UPC2710TB is a Silicon RFIC manufactured using the NESAT III process. This device is suitable as a PA driver amplifier for cellular radio and other communication receivers. The UPC2710TB is pin compatible and has comparable performance to the larger UPC2710T, so it is suitable for use as a replacement to help reduce system size. The IC is housed in a 6 pin super minimold or SOT-363 package. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
25 0.1 0.3 1.0 2.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V, f = 0.5 GHz)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS fU GS PSAT P 1dB NF RLIN RLOUT ISOL GT RTH PARAMETERS AND CONDITIONS Circuit Current (no signal) Small Signal Gain Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 0.1 GHz) Gain Flatness, f = 0.1 ~ 0.6 GHz f = 0.1 ~ 0.8 GHz Saturated Output Power Output Power at 1dB Compression Point Noise Figure Input Return Loss Output Return Loss Isolation Gain -Temperature Coefficient Thermal Resistance (Junction to Ambient) UNITS mA dB GHz dB dBm dBm dB dB dB dB dB/°C °C/W 3 9 34 +11 MIN 16 30 0.7 UPC2710TB S06 TYP 22 33 1.0 ±0.8 +13.5 +7.5 3.5 6 12 39 -0.006 325 5 MAX 29 36.5
California Eastern Laboratories
UPC2710TB ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCC P IN PT TOP T STG PARAMETERS Supply Voltage Input Power Power Dissipation2 Operating Temperature Storage Temperature UNITS V dBm mW °C °C RATINGS 6 +10 200 -40 to +85 -55 to +150
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC PARAMETER Supply Voltage UNITS V MIN 4.5 TYP MAX 5.0 5.5
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85°C).
PIN DESCRIPTIONS
Pin No. 1 Symbol Input Applied Pin Voltage (V) Voltage (V) ­ 0.9 Description Signal input pin. An internal matching circuit, configured with resistors, enables 50 connection over a wide bandwidth. A multi-feedback circuit is designed to cancel the deviations of hFE and resistance. This pin must be coupled to the signal source with a blocking capacitor. Signal output pin. Connect an inductor between this pin and VCC to supply current to the internal output transistors. Power supply pin. This pin should be externally equipped with a bypass capacitor to minimize ground impedance. ­ Ground pins. These pins should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to minimize impedance difference. Internal Equivalent Circuit
6 4
VCC OUT
4
Output
­
­
IN
1
6
VCC
4.5 to 5.5
3
GND
2
GND
5
2 3 5
GND
0
TYPICAL PERFORMANCE CURVES (TA = 25°C)
CIRCUIT CURRENT vs. VOLTAGE
40 35 1.4 1.2 1.0 0.8 0.6 UPC2710T 10 5 0 0 1 2 3 4 5 6 0.4 0.2 0
40 35
CIRCUIT CURRENT vs. TEMPERATURE
Circuit Current, ICC (mA)
30 25 20 15
Circuit Current, ICC (mA)
30 UPC2710T 25 20 15 10 5 0 -60 -40 -20 0 20 40 60 80 100
Supply Voltage, VCC (V)
Operating Temperature, TOP (°C)
UPC2710TB TYPICAL PERFORMANCE CURVES (TA = 25° C)
NOISE FIGURE AND INSERTION GAIN vs. FREQUENCY
35 VCC = 5.5 V Gp 6
RETURN LOSS vs. FREQUENCY
0 VCC = 5.0 V
Input Return Loss, RLIN (dB) Output Return Loss, RLOUT (dB)
Insertion Power Gain, GP (dB)
RLIN -10
VCC = 4.5 V 30 NF VCC = 5.5 V
5
Noise Figure, NF (dB)
VCC = 5.0 V
RLOUT -20
-30
4 VCC = 4.5 V VCC = 5.0 V
-40
25 0.1 0.3 1.0 2.0
3
-50 0.1
0.3
1.0
2.0
Frequency, f (GHz)
Frequency, f (GHz)
ISOLATION vs. FREQUENCY
0 VCC = 5.0V -10
20
POWER vs. FREQUENCY
15 PSAT
x
Isolation, ISOL (dB)
-20
Power (dBm)
10 P1dB 5
-30
-40
0
-50 0.1 0.3 1.0 2.0
-5 0 0.5 1.0 1.5 2.0
Frequency, f (GHz)
Frequency, f (GHz) X: Typical SSB Third Order Intercept Point OUTPUT POWER vs. INPUT POWER AND TEMPERATURE
20 VCC = 5.0 V f = 0.5 GHZ TA = 85° C
OUTPUT POWER vs. INPUT POWER AND VOLTAGE
20 VCC = 5.5 V f = 0.5 GHz 15
15
Output Power, POUT (dBm)
Output Power, POUT (dBm)
10 VCC = 5.0 V 5 VCC = 4.5 V 0
10 TA = -45° C 5 0 TA = 25° C
-5 -10 -15 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10
-5
-10 -15 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10
Input Power, PIN (dBm)
Input Power, PIN (dBm)