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Details, datasheet, quote on part number:UPC8179TB
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Datasheet text preview:
SILICON RFIC LOW CURRENT AMPLIFIER UPC8179TB FOR MOBILE COMMUNICATIONS
FEATURES
· HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm) · SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V · HIGH EFFICIENCY: PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz · POWER GAIN: GP = 13.5 dB TYP at f = 1.0 GHz GP = 15.5 dB TYP at f = 1.9 GHz GP = 15.5 dB TYP at f = 2.4 GHz · EXCELLENT ISOLATION: ISL = 44 dB TYP at f = 1.0 GHz ISL = 42 dB TYP at f = 1.9 GHz ISL = 41 dB TYP at f = 2.4 GHz · LOW CURRENT CONSUMPTION: ICC = 4.0 mA TYP AT VCC = 3.0 V · OPERATING FREQUENCY: ICC = 4.0 mA TYP AT VCC = 3.0 V · LIGHT WEIGHT: 7 mg (standard Value)
POWER GAIN vs. FREQUENCY
+20 VCC = 3.0 V +10 TA = -40°C TA = +25°C TA = +85°C 0 2.4 GHz
10
20 1.0 GHz 30 1.9 GHz 40 0.1 0.3 1.0 3.0
Output match for best performance at each frequency
DESCRIPTION
The UPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can be realized on internal 50 wideband matched IC. This low current amplifier uns on 3.0 V. This IC is manufactured using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/ migration. Thus this IC has exellent performance uniformity and reliability.
APPLICATIOIN
· Buffer amplifiers for 0.1 to 2.4 GHz mobile communications systems.
ELECTRICAL CHARACTERISTICS,
PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GP Power Gain, PARAMETERS AND CONDITIONS Circuit Current (no input signal) f = 1.0 GHz, PIN = -30 dBm f = 1.9 GHz, PIN = -30 dBm f = 2.4 GHz, PIN = -30 dBm f = 1.0 GHz, PIN = -30 dBm f = 1.9 GHz, PIN = -30 dBm f = 2.4 GHz, PIN = -30 dBm f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz f = 1.0 GHz, PIN = -30 dBm f = 1.9 GHz, PIN = -30 dBm f = 2.4 GHz, PIN = -30 dBm
(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50, at LC matched Frequency)
UPC8179TB S06 UNITS mA dB MIN 2.9 11.0 13.0 13.0 39.0 37.0 36.0 -0.5 -2.0 -3.0 4.0 4.0 6.0 TYP 4.0 13.5 15.5 15.5 44.0 42.0 41.0 3.0 1.5 1.0 5.0 5.0 5.0 7.0 7.0 9.0 MAX 5.4 15.5 17.5 17.5 6.5 6.5 6.5
ISOL
Isolation,
dB
P1dB
Output Power at 1 dB gain compression, Noise Figure,
dB
NF
dB
RLIN
Input Return Loss, (without matching circuit)
dB
California Eastern Laboratories
UPC8179TB ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCC ICC PD TOP T STG PIN PARAMETERS Supply Voltage, Pins 4 & 6 Circuit Current Power Dissipation2 UNITS V mA mW °C °C dBm RATINGS 3.6 15 270 -40 to +85 -55 to +150 +5
RECOMMENDED OPERATING CONDITIONS
SYMBOLS VCC TA PARAMETERS Supply Voltage Operating Ambient Temperature UNITS MIN V °C 2.7 -40 TYP MAX 3.0 +25 3.3 +85
Operating Temperature Storage Temperature Input Power
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85°C).
PIN FUNCTIONS
Pin No. 1 Symbol INPUT Pin Voltage 1.09 V Description Signal Input Pin. A internal matching circuit, configured with resistors, enable 50 W connection over a wide band. This pin must be coupled to signal source with capacitor for DC cut. Ground pin. This pin should be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. Signal output pin. This pin is designed as collector output. Due to the high impedance output, this pin should be externally equipped with matching LC matching circuit to next stage. For L, a size 1005 chip inductor can be chosen. Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. Internal Equivalent Circuit
6 4
2 3 5
GND
through external inductor
4
OUTPUT
Same as VCC voltage
2 3 1 5
6
VCC
2.4 to 3.3
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25°C)
CIRCUIT CURRENT vs. VOLTAGE
5 No signals
CIRCUIT CURRENT vs. TEMPERATURE
5 No signals Vcc = 3.0 V
Circuit Current, ICC (mA)
3
Circuit Current, ICC (mA)
0 2 3 4
4
4
3
2
2
1
1
0 1
0 60 40 20 0 +20 +40 +60 +80 +100
Voltage, VCC (V)
Temperature, TA (°C)
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25°C)
1.0 GHz Output Port Matching
GAIN vs. FREQUENCY
+20 Vcc = 3.0 V +10 TA = 40 ºC
20 10
ISOLATION vs. FREQUENCY
VCC = 3.0 V
Isolation, ISOL (dB)
Gain, GP (dB)
0 TA = +25 ºC 10 TA = +85ºC
30 TA = 40 ºC 40 TA = +25ºC
20
50
30
60
TA = +85 ºC
40 0.1 0.3 1.0 3.0
70 0.1 0.3 1.0 3.0
Frequency, f (GHz)
Frequency, f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
0 Vcc = 3.0 V
OUTPUT RETURN LOSS vs. FREQUENCY
+5 VCC = 3.0 V
Output Return Loss, RLOUT (dBm)
Input Return Loss, RLIN (dB)
5
TA = +85 ºC
0 TA = 40ºC TA = +25ºC 10 TA = +85ºC 15
10 TA = +25 ºC 15 TA = 40 ºC
5
20
25
20
30 0.1 0.3 1.0 3.0
25 0.1 0.3 1.0 3.0
Frequency, f (GHz)
Frequency, f (GHz)
OUTPUT POWER vs. INPUT POWER
+10 +5 VCC = 3.0 V TA = 40ºC 0 TA = +85ºC 5 TA = +25ºC 10 15 20 25 30 40 35 30 25 20 15 10 5 0 +5
THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE
0
Thirf Order Intermodulation Distortion, IM3 (dBc)
f1 = 1 000 MHz -10 f2 = 1 001 MHz
Output Power, POUT (dBm)
-20 Vcc = 2.4 V Vcc = 3.0 V
-30
-40 Vcc = 3.3 V -50
-60 20 15 10 5 0 +5
Input Power, PIN (dBm)
Output Power of Each Tone, POUT (dBm)
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