|
Details, datasheet, quote on part number:UPC8182TB
| |
| Part: | UPC8182TB |
| Category: | RF & Microwaves => RFIC |
| Description: | 3V, 2.9 GHZ Silicon Mmic Medium Output Power Amplifier For Mobile Communications(515) |
| Company: | California Eastern Laboratories |
| Datasheet: | Download UPC8182TB datasheet File size : 59 kB |
| Request For quote: | Find where to buy UPC8182TB
|
| |
Datasheet text preview:
3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
FEATURES
· SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V
Noise Figure, NF (dB)
24
UPC8182TB
NOISE FIGURE, POWER GAIN vs. FREQUENCY
· MEDIUM OUTPUT POWER: PO(1dB) = +9.5 dBm TYP at f = 0.9 GHz PO(1dB) = +9.0 dBm TYP at f = 1.9 GHz PO(1dB) = +8.0 dBm TYP at f = 2.4 GHz · POWER GAIN: GP = 21.5 dB TYP at f = 0.9 GHz GP = 20.5 dB TYP at f = 1.9 GHz GP = 20.5 dB TYP at f = 2.4 GHz · UPPER LIMIT OPERATING FREQUENCY: fU = 2.9 GHz TYP at 3 dB bandwidth · HIGH-DENSITY SURFACE MOUNTING: 6-pin super minimold package (2.0 x 1.25 x 0.9 mm)
Power Gain, GP (dB)
· CIRCUIT CURRENT: ICC = 30 mA TYP at VCC = 3.0 V
22
GP VCC = 3.0 V
20
18
5
16
4
14
NF
VCC = 3.0 V
3
12
0.1
0.3
1.0
3.0
Frequency, f (GHz)
DESCRIPTION
The UPC8182TB is a silicon monothilic integrated circuit designed as amplifier for mobile communications. This IC has low current consumption and wider band than UPC2771TB. This IC is manufactured using NEC's 25 GHz fT UHSO silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. This IC has excellent performance, uniformity, and reliability.
APPLICATIONS
· Buffer amplifiers for 1.9 GHz to 2.4 GHz mobile communication system.
ELECTRICAL CHARACTERISTICS
(TA = 25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50) PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GP PARAMETERS AND CONDITIONS Circuit Current (no signal) Power Gain, f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz UNITS mA dB MIN 22.0 19.0 17.5 18.0 2.8 30 27 28 UPC8182TB S06 TYP 30.0 21.5 20.5 20.5 4.5 4.5 5.0 2.9 33 32 31 MAX 38.0 25.0 23.5 24.0 6.0 6.0 6.5
NF
Noise Figure,
dB
fU ISL
Upper Limit Operating Frequency, 3 dB down below from gain at f = 1.0 GHz Isolation,
GHz dB
California Eastern Laboratories
UPC8182TB ELECTRICAL CHARACTERISTICS, cont.
(TA = 25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50) PART NUMBER PACKAGE OUTLINE SYMBOLS RLin PARAMETERS AND CONDITIONS Input Return Loss, f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz UNITS dB MIN 6 8 9 8 9 11 +7.5 +7.0 +5.5 UPC8182TB S06 TYP 8 10 12 10 11 14 +9.5 +9.0 +8.0 +10.5 +10.0 +9.5 MAX
R L out
Output Return Loss,
dB
P O(1dB)
1 dB Gain Compression Output Level, f = 0.9 GHz f = 1.9 GHz f = 2.4 GHz Saturated Output Power Level, f = 0.9 GHz, PIN = -5 dBm f = 1.9 GHz, PIN = -5 dBm f = 2.4 GHz, PIN = -5 dBm
dBm
PO(SAT)
dBm
ABSOLUTE MAXIMUM RATINGS1 (TA = +25°C)
SYMBOLS VCC ICC PD TA T STG PIN PARAMETERS Supply Voltage2 UNITS V mA mW °C °C dBm RATINGS 3.6 60 200 -40 to +85 -55 to +150 +10
RECOMMENDED OPERATING CONDITIONS
SYMBOLS VCC TA PARAMETERS Supply Voltage1 Ambient Temperature UNITS MIN V °C 2.7 -40 TYP MAX 3.0 +25 3.3 +85
Total Cicuit Current Power Dissipation3
Operating Ambient Temperature Storage Temperature Input Power
Note: 1. Same voltage applied to pins 4 and 6
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage. 2. TA = 25°C, pins 4 and 6. 3. Mounted on a double-sided copper clad 50x50x1.6 mm epoxy glass PWB, TA = +85°C.
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25°C)
CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE
40
No Signal 35
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
35
No Signal VCC = 3.0 V
Circuit Current, ICC (mA)
Circuit Current, ICC (mA)
0 1 2 3 4
30 25 20 15 10 5 0
30 25 20 15 10 5 0 -60
-40
-20
0
+20
+40
+60
+80
+100
Supply Voltage, VCC (V)
Operating Ambient Temperature, TA (°C)
UPC8182TB TYPICAL PERFORMANCE CURVES, cont. (Unless otherwise specified, TA = 25°C)
POWER GAIN vs. FREQUENCY
0
ISOLATION vs. FREQUENCY
VCC = 3.0 V -10
VCC = 3.0 V
Power Gain, GP (dB)
TA = 25°C
Isolation, ISOL (dB)
-20
-30
-40
-50 0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY
0 VCC = 3.0 V
OUTPUT POWER vs. INPUT POWER
+15 VCC = 3.0 V +10
Input Return Loss, RLIN (dB) Output Return Loss, RLOUT (dBm)
-10
Output Power, POUT (dBm)
+5 0 -5 -10 -15 -20
f = 0.9 GHz f = 2.4 GHz f = 1.9 GHz
-20
-30
-40
-50 0.1
0.3
1.0
3.0
-25 -50
-40
-30
-20
-10
0
+10
Frequency, f (GHz)
Input Power, PIN (dBm)
SATURATED OUTPUT POWER vs. FREQUENCY
THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE
0
Saturated Output Power, PO(sat) (dBm)
20 18 16 14 12 10 8 6 0.1 0.5 1.0 3.0 VCC = 3.0 V
Thirf Order Intermodulation Distortion, IM3 (dBc)
f1 = 900 MHz f2 = 902 MHz
-10
-20
-30 VCC = 3.0 V
-40
-50
-60 -15 -10 -5 0 +5 +10
Frequency, f (GHz)
Output Power of Each Tone, POUT (dBm)
|
|
