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Details, datasheet, quote on part number:NESG3031M05
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| Part: | NESG3031M05 |
| Category: | Discrete => Transistors => Bipolar |
| Description: | NPN SiGe RF Transistor For Low Noise, High-Gain Amplification Flat-Lead 4-PIN Thin-Type Super Minimold
FEATURES
• The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG) |
| Company: | Celeritek |
| Datasheet: | Download NESG3031M05 datasheet File size : 336 kB |
| Request For quote: | Find where to buy NESG3031M05
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