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Part: NESG3031M05
Category:
Discrete
-> Transistors
-> Bipolar
Description: NPN SiGe RF Transistor For Low Noise, High-Gain Amplification Flat-Lead 4-PIN Thin-Type Super Minimold <<<>>>FEATURES<<<>>>• The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz<<<>>>NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz<<<>>>NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz<<<>>>• Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz<<<>>>• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz<<<>>>• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
Company: Celeritek
Datasheet: Download NESG3031M05 datasheet File size : 336 kB
Request For quote: Find where to buy NESG3031M05
Others parts begin by ne
NE-1 NE-2 NE-3 NE-4 NE-5 NE-6
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