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Part: NESG3031M14-T3-A
Category:
Discrete
-> Transistors
-> Bipolar
Description: NEC's NPN SiGe High Frequency Transistor<<<>>>THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION:<<<>>>NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz<<<>>>NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz<<<>>>• MAXIMUM STABLE POWER GAIN: MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz<<<>>>• SiGe HBT TECHNOLOGY (UHS3) ADOPTED:<<<>>>fmax = 110 GHz<<<>>>• M14 PACKAGE: 4-pin lead-less minimold package
Company: Celeritek
Datasheet: Download NESG3031M14-T3-A datasheet File size : 559 kB
Request For quote: Find where to buy NESG3031M14-T3-A
Others parts begin by ne
NE-1 NE-2 NE-3 NE-4 NE-5 NE-6
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