Details, datasheet, quote on part number: 1N994
Part1N994
CategoryDiscrete
Description
CompanyCentral Semiconductor Corporation
DatasheetDownload 1N994 datasheet
Cross ref.Similar parts: 1N4151
Quote
Find where to buy
 
  
Related products with the same datasheet
1N995
Some Part number from the same manufacture Central Semiconductor Corporation
1N995
1SMB100A Uni-directional Glass Passivated Junction Transient Voltage Suppressor 600 Watts, 5.0 Thru 170 Volts
1SMB100CA 100 V, 600Watt, Bi-directional Glass Passivated Junction Transient Voltage Suppressor
1SMB10A
1SMB10CA 100 V, 600Watt, Bi-directional Glass Passivated Junction Transient Voltage Suppressor
1SMB110A
1SMB110CA 100 V, 600Watt, Bi-directional Glass Passivated Junction Transient Voltage Suppressor
1SMB11A
1SMB11CA 100 V, 600Watt, Bi-directional Glass Passivated Junction Transient Voltage Suppressor
1SMB120A
1SMB120CA 100 V, 600Watt, Bi-directional Glass Passivated Junction Transient Voltage Suppressor
1SMB12A
1SMB12CA 100 V, 600Watt, Bi-directional Glass Passivated Junction Transient Voltage Suppressor
1SMB130A
1SMB130CA 100 V, 600Watt, Bi-directional Glass Passivated Junction Transient Voltage Suppressor
1SMB13A
1SMB13CA 100 V, 600Watt, Bi-directional Glass Passivated Junction Transient Voltage Suppressor
1SMB14A
1SMB14CA 100 V, 600Watt, Bi-directional Glass Passivated Junction Transient Voltage Suppressor
1SMB150A
1SMB150CA 100 V, 600Watt, Bi-directional Glass Passivated Junction Transient Voltage Suppressor

CENW13 : Power Transistors

CTGS73-271M : Power Inductors - Unshielded

CBR35-020PW : 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 400000 mA ; RoHS Compliant: RoHS ; Package: PLASTIC, CASE FP, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4

CLL5237CBK : 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Specifications: Diode Type: VOLTAGE REGULATOR DIODE

CMPF4391LEADFREE : 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET Specifications: Polarity: N-Channel ; V(BR)DSS: 40 volts ; rDS(on): 30 ohms ; PD: 350 milliwatts ; Number of units in IC: 1

CYT4033DTR : 1 A, 80 V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR Specifications: Polarity: PNP ; Package Type: ROHS COMPLIANT, PLASTIC PACKAGE-8

MPQ7093LEADFREE : 250 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 Specifications: Polarity: PNP

1SMB45CABK : 600 W, BIDIRECTIONAL, SILICON, TVS DIODE Specifications: Configuration: Single ; Direction: Bidirectional ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 50 to 57.5 volts

2N3906TRH : 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 Specifications: Polarity: PNP

Same catergory

BZX384-C3 : Zener Diodes. Silicon Planar Power Zener Diodes The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is 5%. Replace "C" with "B" for 2% tolerance. Other voltage tolerances and other Zener voltages are available upon request. Ratings at 25C ambient temperature unless otherwise specified. Zener Current Power.

CMHD4150 : 50 V, High Speed Switching Diode. CMHD4150 SURFACE MOUNT HIGH SPEED SWITCHING DIODE The CENTRAL SEMICONDUCTOR CMHD4150 type is a high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications. MARKING CODE: C50 SOD-123 CASE MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage.

D1FH3 : . Storage Temperature Operating Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current Peak Surge Forward Current (Tc=25) Symbol Conditions Tstg Tj VRM IO 50Hz sine wave, R-load Tc=95 IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Conditions IF=1.0A, Pulse measurement IF=3.0A, Pulse measurement VR=VRM, Pulse measurement.

DT115TKA : Digital Transistors ( Built in Resistor ). ! 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation,.

DZB12C : 1.0w Zener Diodes. Plastic molded structure. Voltage regulator use. Power dissipation:P=1.0W. Zener to 30V s Parameter Power Dissipation Junction Temperature Storage Temperature Symbol P Tj Tstg Conditions Ratings to +150 Unit W C SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN.

IRF9531 : Transistors.

T1212MH : Standard Triacs.

05002240CMMP : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000024 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 2.40E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style:.

A16F20MS02 : 16 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AA. s: Package: DO-4, DO-4, 1 PIN ; Number of Diodes: 1 ; VRRM: 200 volts ; IF: 16000 mA ; trr: 0.2000 ns.

FRH10A04 : 10 A, 40 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Anode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 10000 mA ; Pin Count: 3 ; Number of Diodes: 2.

KMA7D0NP30Q : 30 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0240 ohms ; Package Type: FLP-8, 8 PIN ; Number of units in IC: 2.

STL50N3LLH5 : 12.6 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0220 ohms ; Package Type: 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8 ; Number of units in IC: 1.

VFT2060C-E3/4W : 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 10000 mA ; Package: ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

2181MCM2225LGN0110 : CAP,AL2O3,180UF,200VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

52233R-LF1 : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.

 
0-C     D-L     M-R     S-Z