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Details, datasheet, quote on part number: 2N3762
 
 
Part number2N3762
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description
CompanyCentral Semiconductor Corporation
DatasheetDownload 2N3762 datasheet
Request For QuoteFind where to buy 2N3762
 


 
Specifications, Features, Applications

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed for core driver applications. MAXIMUM RATINGS (TA=25°C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance VCBO VCEO VEBO IC PD TJ,Tstg 60 50 UNITS °C °C/W

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL IBL ICEV BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) TEST CONDITIONS VCE=˝Rated VCBO, VEB=2.0V VCE=˝Rated VCBO, VEB=2.0V VCB=˝Rated VCBO, IB=100mA 2N3762 MIN MAX 2N3763 MIN MAX 100 10 UNITS nA ľA

ELECTRICAL CHARACTERISTICS (Continued) SYMBOL hFE |hfe| Cob Cib tf Q TEST CONDITIONS IB=100mA 2N3762 MIN MAX 2N3763 MIN MAX UNITS




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