DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed for core driver applications. MAXIMUM RATINGS (TA=25°C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance VCBO VCEO VEBO IC PD TJ,Tstg 60 50 UNITS °C °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL IBL ICEV BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) TEST CONDITIONS VCE=˝Rated VCBO, VEB=2.0V VCE=˝Rated VCBO, VEB=2.0V VCB=˝Rated VCBO, IB=100mA 2N3762 MIN MAX 2N3763 MIN MAX 100 10 UNITS nA ľA
ELECTRICAL CHARACTERISTICS (Continued) SYMBOL hFE |hfe| Cob Cib tf Q TEST CONDITIONS IB=100mA 2N3762 MIN MAX 2N3763 MIN MAX UNITS
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