Details, datasheet, quote on part number: 2N3762
Part2N3762
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description
CompanyCentral Semiconductor Corporation
DatasheetDownload 2N3762 datasheet
Cross ref.Similar parts: 2SC95
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Features, Applications

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed for core driver applications. MAXIMUM RATINGS (TA=25C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance VCBO VCEO VEBO IC PD TJ,Tstg 60 50 UNITS C C/W

ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL IBL ICEV BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) TEST CONDITIONS VCE=Rated VCBO, VEB=2.0V VCE=Rated VCBO, VEB=2.0V VCB=Rated VCBO, IB=100mA 2N3762 MIN MAX 2N3763 MIN MAX 100 10 UNITS nA A

ELECTRICAL CHARACTERISTICS (Continued) SYMBOL hFE |hfe| Cob Cib tf Q TEST CONDITIONS IB=100mA 2N3762 MIN MAX 2N3763 MIN MAX UNITS


 

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