Details, datasheet, quote on part number: 2N3771
Part2N3771
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description
CompanyCentral Semiconductor Corporation
DatasheetDownload 2N3771 datasheet
Cross ref.Similar parts: 2N377, 2N5301, 2N5302
Quote
Find where to buy
 
  
Related products with the same datasheet
2N3772
2N3773
2n6609
Some Part number from the same manufacture Central Semiconductor Corporation
2N3772
2N3789
2n3798
2N3819
2N3820
2n3821
2N3839
2n3902
2N3903
2N3905
2n398
2N4036
2n404
2n404a
2N4058
2N4103
2N4123
2N4208
2N4231A
2N4237
2n4248
Same catergory

20TQ : 5 to 100 Amp. Schottky Rectifier 20 Amp. IF(AV) Rectangular waveform VRRM range IFSM 5 s sine @ 20 Apk, = 125C range C The 20TQ Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation 150 C junction temperature. Typical applications are in switching power supplies, converters,.

2SD1815 : NPN Epitaxial Planar Silicon Transistor, High-current Switching Application.

2SK0664 : Marking = 3N ;; VDS(V) = ;; VDSS(V) = 50 ;; ID(A) = 0.1 ;; RDS(on) (typ)(W ) = ;; RDS(on) (max)(W ) = 50 ;; Package = SMini3-G1.

BUL213 : High Voltage Fast-switching NPN Power Transistor. STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES The BUL213 is manufactured using high voltage Multiepitaxial.

BUY70A : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 500V ;; IC(cont) = 10A ;; HFE(min) = 15 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1A ;; FT = - ;; PD = 75W.

DIM800JSM33-A : 3300V. Igbt Modules - Single Switch. High Isolation Single Switch IGBT Module Preliminary Information KEY PARAMETERS VCES VCE(sat) IC IC(PK) (typ) (max) 800A 1600A 10.5kV Isolation 10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives Choppers.

SB100-18 : Shottky Barrier Diode, 180V/10A Rectifier. Schottky Barrier Diode (Twin Type Cathode Common) Applications High frequency rectification (switching regulators, converters, choppers). Low forward voltage (VF max=0.85V). Fast reverse recovery time (trr max=45ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. s Parameter Repetitive Peak Reverse.

SEMB4 : PNP Silicon Digital Transistor Array Preliminary Data. PNP Silicon Digital Transistor Array Preliminary data Switching circuit, inverter, interface circuit, driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistor R1 =10k) Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Collector-emitter voltage Collector-base voltage Emitter-base voltage Input.

AP9971GM-HF : 5 A, 60 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0500 ohms ; PD: 2000 milliwatts ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, SOP-8 ; Number of units in IC: 2.

C1N4156TR-RECU : SILICON, STABISTOR DIODE, DO-35. s: Diode Type: STABISTOR DIODE ; VF: 1.54 to 1.84 volts.

D11/CRCW060310023211%ET5E3 : RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 2320 ohm, SURFACE MOUNT, 0603. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0603, CHIP, LEAD FREE ; Resistance Range: 2320 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power.

ER74390RJT : RESISTOR, WIRE WOUND, 3 W, 5 %, 100 ppm, 390 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 390 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 3 watts (0.0040 HP) ; Standards.

KSC5321J69Z : 5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220. s: Polarity: NPN ; Package Type: TO-220, TO-220, 3 PIN.

SDA382G : 10 A, 1000 V, SILICON, RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA FAST RECOVERY ; IF: 10000 mA ; trr: 0.0700 ns.

513-010A1-2.5 : CAPACITOR, VARIABLE, CERAMIC, 100 V, 1 pF - 2.5 pF, VERTICAL ADJUSTER, THROUGH HOLE MOUNT. s: Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Type: Variable ; Capacitance Range: 1.00E-6 to 2.50E-6 microF ; WVDC: 100 volts ; Mounting Style: Through Hole ; Operating Temperature: 85 C (185 F).

 
0-C     D-L     M-R     S-Z