Details, datasheet, quote on part number: 2N3789
Part2N3789
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description
CompanyCentral Semiconductor Corporation
DatasheetDownload 2N3789 datasheet
Cross ref.Similar parts: BDW52C
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Features, Applications

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IB PD TJ,Tstg 2N3792 80 UNITS C C/W

ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) SYMBOL ICEV IEBO BVCEO VCE(SAT) VBE(ON) hFE fT TEST CONDITIONS VCE= Rated VCEO, VEB=1.5V VCE= Rated VCEO, 2N3789 2N3791 MIN MAX 2N3790 2N3792 MIN MAX UNITS mA


 

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