DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IB PD TJ,Tstg 2N3792 80 UNITS °C °C/W

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) SYMBOL ICEV IEBO BVCEO VCE(SAT) VBE(ON) hFE fT TEST CONDITIONS VCE= Rated VCEO, VEB=1.5V VCE= Rated VCEO, 2N3789 2N3791 MIN MAX 2N3790 2N3792 MIN MAX UNITS mA