DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5060 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=60°C) Peak One Cycle Surge Peak Forward Gate Current (tp=20µs) Peak Reverse Gate Voltage Peak Gate Power Dissipation Average Gate Power Dissipation (tp=20µs) Storage Temperature Junction Temperature SYMBOL 2N5063 2N5064 UNITS VDRM, VRRM V IT(RMS) 0.8 A ITSM 10 A IGM VGM PGM PG(AV) Tstg +125 °C

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) SYMBOL IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt tq TEST CONDITIONS Rated VDRM, VRRM, RGK=1K MIN TYP MAX UNITS µA mA V/µs µs