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Part: CPD80
Category:
Discrete
Description:
Company: Central Semiconductor Corporation
Datasheet: Download CPD80 datasheet File size : 704 kB
Request For quote: Find where to buy CPD80
Datasheet text preview:
Central
TM
PROCESS
Semiconductor Corp.
Switch Diode
CPD80
High Voltage Switching Diode Chip
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 16 x 16 MILS 9.0 MILS 6.5 x 6.5 MILS Al - 30,000Å Au - 18,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 45,050 PRINCIPAL DEVICE TYPES CMPD2003 CMPD2004 1N3070 CMDD2003 CMDD2004
The Typical Electrical Characteristics data for this chip is currently being revised. For the latest updated data for this Chip Process, please visit our website at:
BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
www.centralsemi.com/chip
R1 (1-August 2002)
Others parts begin by cp
CP-1 CP-2 CP-3 CP-4 CP-5
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