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Details, datasheet, quote on part number: CEP04N6
 
 
Part numberCEP04N6
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs => N chanel
TitleN chanel
DescriptionN-channel Enhancement Mode Field Effect Transistor TO220/TO263 Package
CompanyChino Excel Technology
DatasheetDownload CEP04N6 datasheet
Request For QuoteFind where to buy CEP04N6
 


 
Specifications, Features, Applications

N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES

RDS(ON)=2.5 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. & TO-263 package.

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 Unit W/ C

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Single Pluse Avalanche Energy c Avalanche Current Repetitive Avalanche Energy
EAR BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 250ľA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VDS = VGS, = 250ľA VGS = 2A VGS = 10V, VDS = 10V VDS = 2A VDD = 4A, VGS RGEN=25 600

Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS

Notes a.Pulse Test:Pulse Width 300s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. RG=25 , Starting TJ=25 C




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