Details, datasheet, quote on part number: CEP61A3
PartCEP61A3
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Power FETs => N chanel
TitleN chanel
DescriptionN-channel Enhancement Mode Field Effect Transistor TO220/TO263 Package
CompanyChino Excel Technology
DatasheetDownload CEP61A3 datasheet
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Features, Applications

N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES

RDS(ON)=19m @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. & TO-263 package.

ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit W/ C

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RJC RJA
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS

Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Notes a.Pulse Test:Pulse Width 300s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.


 

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