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Details, datasheet, quote on part number: 2SD211
 
 
Part number2SD211
Category
DescriptionSilicon NPN Power Transistors
CompanySavantic
DatasheetDownload 2SD211 datasheet
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Specifications, Features, Applications

DESCRIPTION·With TO-3 package·Large current capability·Wide area of safe operation APPLICATIONS·For power amplifier and switching applications

PINNING(see Fig.2) PIN 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION

SYMBOL VCBO VCEO VEBO PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE UNIT

Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS 30 8 MIN 60 6

SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT



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