Details, datasheet, quote on part number: A1015
DescriptionPNP General Purpose Transistors
CompanyWeitron Technology
DatasheetDownload A1015 datasheet
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Features, Applications

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation TA=25C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Collector-Base Breakdown Voltage, = 0 Collector-Emitter Breakdown Voltage, = 0 Emitter-Base Breakdown Voltage, = 0 Collector Cut-off Current, VCB = 0 Collector Cut-off Current, VCE = 0 Emitter Cut-off Current, VEB = 0 V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit

DC Current Gain VCE C =-2.0mA Collector-Emitter Saturation Voltage IB =-10mA Base-Emitter Voltage IB =-10mA TransitionFrequence VCE = 30MHz Collector Output Capacitance VCB = 1MHz Noise Figure VCE 1KMHz hFE1 VCE(sat) VBE(sat) fT Cob NF


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