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Details, datasheet, quote on part number:DE150-501N04A
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Datasheet text preview:
An
IXYS Company
Directed Energy, Inc.
DE150-101N09A
RF Power MOSFET
Preliminary Data Sheet
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol Test Conditions Characteristic Values min. VDSS VGS(th) IGSS IDSS RDS(on) gfs
VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C TJ = 125°C VGS = 0 VGS = 15 V, ID = 0.5ID25 Pulse test, t 300µS, duty cycle d 2% VDS = 15 V, ID = 0.5ID25, pulse test 1.6mm (0.063 in) from case for 10 s
VDSS ID25 RDS(on)
Maximum Ratings 100 100 ±20 ±30 9.0 54 14 7.5 5.5 >200 80 3.5 -55...+150 150 -55...+150 300 2 V V V V A A A mJ V/ns V/ns W W °C °C °C °C g
Features
SG1 SG2 GATE
= = = =
100 V 9.0 A 0.16 80W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS IDM, di/dt 100A/µs, VDD VDSS, Tj 150°C, RG = 0.2 IS = 0 Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C
PDHS
DRAIN
SD1
SD2
· Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power · · - - · · ·
cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances
TJ = 25°C unless otherwise specified
typ.
max. V
100 2 3 4 ±100 25 250 0.16 4.6 8.0
V nA µA µA S
Advantages
· Optimized for RF and high speed
switching at frequencies to >100MHz
· Easy to mount--no insulators needed · High power density
An
IXYS Company
Directed Energy, Inc.
Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 5 650 pF pF pF ns ns ns ns 35 10 15 1.5 nC nC nC K/W
DE150-101N09A
RF Power MOSFET
Symbol
Test Conditions
RG C i ss Coss C rss Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd RthJHS
VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz
160 15 4 4 4 4 12 2.5 5.0
Source-Drain Diode Symbol IS ISM VSD T rr Test Conditions
VGS = 0 V
Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 9.0 54 1.5 300 A A V ns
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 µs, duty cycle 2%
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,850,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715
An
IXYS Company
Directed Energy, Inc.
DE150-101N09A
RF Power MOSFET
201N09A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: *SYM=POWMOSN .SUBCKT 101N09A 10 20 30 * TERMINALS: D G S * 100 Volt 9 Amp .16 ohm N-Channel Power MOSFET 10-30-2001 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 .6N RD 4 1 .16 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=9.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=500 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=500 M=.3 VJ=.4 TT=400N RS=10M) .ENDS
Doc #9200-0242 Rev 1 © 2001 Directed Energy, Inc.
Directed Energy, Inc. An IXYS Company
2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com
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