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Details, datasheet, quote on part number:DE275X2-102N06A
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Datasheet text preview:
An
IXYS Company
Directed Energy, Inc.
DE275X2-102N06A
RF Power MOSFET
Preliminary Data Sheet
Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
VDSS ID25 RDS(on) PDHS
= = = =
1000 V 6A 2.0 750 W
The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
Unless noted, specifications are for each output device
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS
(1) (1)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS IDM, di/dt 100A/µs, VDD VDSS, Tj 150°C, RG = 0.2 IS = 0 Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C
Maximum Ratings 1000 1000 ±20 ±30 6 48 6 20 5 >200 750 5.0 0.17 -55...+150 150 -55...+150 V V V V A A A mJ V/ns V/ns W W K/W °C °C °C °C g
SG1 SD1 SD2 SG2 GATE 1 GATE 2 DRAIN 1 DRAIN 2
Features
PDAMB TJ TJM Tstg TL
· Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power · · - - · · ·
cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances
RthJHS (1)
1.6mm (0.063 in) from case for 10 s
300 4
Weight Symbol Test Conditions Characteristic Values min. VDSS VGS(th) IGSS IDSS RDS(on) gfs
VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C TJ = 125°C VGS = 0 VGS = 15 V, ID = 0.5ID25 Pulse test, t 300µS, duty cycle d 2% VDS = 15 V, ID = 0.5ID25, pulse test
Advantages
TJ = 25°C unless otherwise specified
· High Performance Push-Pull RF
Package
typ.
max. V 5.5 ±100 V nA
1000 2.5
· Optimized for RF and high speed
switching at frequencies to >100MHz
· Easy to mount--no insulators needed · High power density
Note: All specifications are per each transistor, unless otherwise noted.
(1)
50 µA 1 mA 2.5 2 6 S
Thermal specifications are for the package, not per transistor
An
IXYS Company
Directed Energy, Inc.
Characteristic Values min. typ. 0.3 1800
(TJ = 25°C unless otherwise specified)
DE275X2-102N06A
RF Power MOSFET
Symbol
Test Conditions
max. pF pF pF ns ns ns ns nC nC nC
RG C i ss Coss C rss Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD T rr Q RM IRM
(1) IF = IS, -di/dt = 100A/µs, VR = 100V VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz
100 30 3 2 4 5 50 20 30 Characteristic Values min. typ.
(TJ = 25°C unless otherwise specified)
Test Conditions
VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 µs, duty cycle 2%
max. 6 48 1.5 A A V ns µC A
200 0.6 4
These parameters apply to the package, not individual MOSFET devices.
For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on DEI's web site at www.directedenergy.com/apptech.htm
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,850,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715
An
IXYS Company
Directed Energy, Inc.
DE275X2-102N06A
RF Power MOSFET
102N06A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
10 DRAIN
Ld
4
Rd Lg 20 GATE Doff Roff D1crs D2crs
5
Ron Don
6
8
1 M3 3 Dcos Rds
2
7
Ls
30 SOURCE
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm
Net List: *SYM=POWMOSN .SUBCKT 102N06A 10 20 30 * TERMINALS: D G S * 1000 Volt 6 Amp 2.0 Ohm N-Channel Power MOSFET M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .5 DON 6 2 D1 ROF 5 7 1.0 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 1.9N RD 4 1 1.7 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M) .ENDS
Doc #9200-0224 Rev 2 © 2001 Directed Energy, Inc.
Directed Energy, Inc. An IXYS Company
2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com
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