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Details, datasheet, quote on part number:1N4154
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| Part: | 1N4154 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes => Small Signal |
| Description: | 35V; Fast Switching Diode |
| Company: | Diodes, Inc. |
| Datasheet: | Download 1N4154 datasheet File size : 61 kB |
| Request For quote: | Find where to buy 1N4154
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Datasheet text preview:
1N4154
FAST SWITCHING DIODE Features
· · · · Fast Switching Speed Suitable for General Logic Applications High Conductance Available in Surface Mount Version (LL4154)
A
B
A
D
C
Mechanical Data
· · · · · Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.13 grams (approx.)
DO-35 Dim A B C D Min 25.40 ¾ ¾ ¾ Max ¾ 4.00 0.60 2.00
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified Symbol VRM VRRM VR W M VR VR(RMS) IO IFSM Pd RqJA Tj, TSTG 1N4154 35 25 18 150 0.5 2.0 500 300 -65 to +175 Unit V V V mA A mW K/W °C
Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t £ 1.0s @ t = 1.0ms Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range
Electrical Characteristics
Characteristic Maximum Forward Voltage Drop Maximum Peak Reverse Current Junction Capacitance Reverse Recovery Time
@ TA = 25°C unless otherwise specified Symbol VFM IRM Cj trr Min ¾ ¾ ¾ ¾ Max 1.0 100 4.0 4.0 Unit V nA mA pF ns Test Condition IF = 30mA VR = 25V VR = 25V, Tj = 150°C VR = 0V, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W
Note:
1. Valid provided that leads are kept at ambient temperature.
DS12015 Rev. F-2
1 of 2
1N4154
500
1000
Pd, POWER DISSIPATION (mW)
IF, FORWARD CURRENT (mA)
400
100
300
10
Tj = 100°C
Tj = 25°C
200
1.0
100
0.1
0 0 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 200
0.01
0
1 VF, FORWARD VOLTAGE (V) Fig. 2 Forward Characteristics
2
1.1
Tj = 25°C f = 1.0MHz
10,000
RELATIVE CAPACITANCE RATIO [CTOT(VR)/CTOT(0V)]
IR, LEAKAGE CURRENT (nA)
1.0
1,000
0.9
100
0.8
10
0.7 0 2 4 6 8 10
VR = 25V 1 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Leakage Current vs Junction Temperature
VR, REVERSE VOLTAGE (V) Fig. 3 Relative Capacitance Variation
DS12015 Rev. F-2
2 of 2
1N4154
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