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Details, datasheet, quote on part number:1N4448HWS-7
 
 
Part:1N4448HWS-7
Category:Discrete => Diodes & Rectifiers => Switching Diodes
Description:Surface Mount Fast Switching Diode
Company:Diodes, Inc.
Datasheet:Download 1N4448HWS-7 datasheet   File size : 74 kB
Request For quote:  Find where to buy 1N4448HWS-7
 



Datasheet text preview:
1N4448HWS
SURFACE MOUNT FAST SWITCHING DIODE Features

NEW PRODUCT

· · · · · · · · · · ·

Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance
H G A B C E D

SOD-323 Dim A
J

Min 2.30 1.60 1.20 0.25 0.20 0.10 0°

Max 2.70 1.80 1.40 0.35 0.40 0.15 8°

Mechanical Data
Case: SOD-323, Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture Sensitivity: Level 1 per J-STD-020A Polarity: Cathode Band Leads: Solderable per MIL-STD-202, Method 208 Marking: T5 Weight: 0.004 grams (approx.)

B C D

1.05 Typical

a

E G H J a

0.05 Typical

All Dimensions in mm

Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0s Power Dissipation (Note 2) Thermal Resistance Junction to Ambient Air (Note 2) Operating and Storage Temperature Range Symbol VRM VRRM VR W M VR VR(RMS) IFM IO IFSM Pd RqJA Tj , TSTG 1N4448HWS 100 80 57 500 250 4.0 2.0 200 625 -65 to +150 Unit V V V mA mA A mW °C/W °C

Electrical Characteristics
Characteristic Reverse Breakdown Voltage (Note 1)

@ TA = 25°C unless otherwise specified Symbol VBR(R) VFM Min 80 0.62 ¾ ¾ ¾ ¾ ¾ ¾ Max ¾ 0.72 0.855 1.0 1.25 100 50 30 25 3.5 4.0 Unit V Test Condition IR = 100mA IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 80V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W

Forward Voltage (Note 1)

V

Peak Reverse Current (Note 1) Total Capacitance Reverse Recovery Time Notes:

IRM CT trr

nA mA mA nA pF ns

1. Short duration test pulse used to minimize self-heating. 2. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS30196 Rev. 4 - 2

1 of 3

1N4448HWS

NEW PRODUCT

Ordering Information
Device 1N4448HWS-7 Notes:

(Note 3) Packaging SOD-323 Shipping 3000/Tape & Reel

3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information
Type Code

T5
Cathode Band

300

100

POWER DISSIPATION, MILLIWATTS

IF, FORWARD CURRENT (mA)

200

10

Ta = 25°C

Ta = 50°C

100

Ta = 85°C

1

Ta = 0°C

Ta = -30°C

0 0 25 50 75 125 125 150 AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve
10.0
trr, REVERSE RECOVERY TIME (nS)

0.1

0

200

400

600

800

1000

VF, FORWARD VOLTAGE (mV) Fig. 2 Typical Forward Characteristics
2.5

IR, REVERSE CURRENT (µA)

Ta = 100°C

2.0

1.0

1.5

Ta = 75°C

0.10
Ta = 50°C Ta = 25°C

1.0

0.01
Ta = -30°C

Ta = 0°C

0.5

0

0.001

0

20

40

60

80

0

2

4

6

8

10

VR, REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics

IF, FORWARD CURRENT (mA) Fig. 4 Reverse Recovery Time vs. Forward Current

DS30196 Rev. 4 - 2

2 of 3

1N4448HWS

4

NEW PRODUCT

f = 1MHz

CT, TOTAL CAPACITANCE (pF)

3

2

1

0 0 1 2

3

4

5

6

VR, REVERSE VOLTAGE (V) Fig. 5 Total Capacitance vs. Reverse Voltage

DS30196 Rev. 4 - 2

3 of 3

1N4448HWS