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Details, datasheet, quote on part number:1N4448W-7
 
 
Part:1N4448W-7
Category:Discrete => Diodes & Rectifiers => Switching Diodes
Description:Fast Switching Surface Mount Diode
Company:Diodes, Inc.
Datasheet:Download 1N4448W-7 datasheet   File size : 76 kB
Request For quote:  Find where to buy 1N4448W-7
 



Datasheet text preview:
1N4448W
FAST SWITCHING SURFACE MOUNT DIODE Features
· · · · · · · · · · · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance
H G A B C E D

SOD-123 Dim A
J

Min 3.55 2.55 1.40 -- 0.25 -- 0°

Max 3.85 2.85 1.70 1.35 -- 0.10 8°

Mechanical Data
Case: SOD-123, Molded Plastic Plastic Material: UL Flammability Rating Classification 94V-0 Moisture Sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Date Code and Type Code: See Page 3 Type Code: T5 Weight: 0.01 grams (approx.) Ordering Information See Page 3

B C D E G H J a

a

0.55 Typical 0.11 Typical

All Dimensions in mm

Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0s Power Dissipation (Note 2) Thermal Resistance Junction to Ambient Air (Note 2) Operating and Storage Temperature Range Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RqJA Tj , TSTG 1N4448W 100 75 53 500 250 4.0 2.0 400 315 -65 to +150 Unit V V V mA mA A mW °C/W °C

Electrical Characteristics
Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1)

@ TA = 25°C unless otherwise specified Symbol V(BR)R VFM Min 75 0.62 ¾ ¾ ¾ ¾ ¾ ¾ Max ¾ 0.72 0.855 1.0 1.25 2.5 50 30 25 4.0 4.0 Unit V V mA mA mA nA pF ns Test Condition IR = 10mA IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W

Peak Reverse Current (Note 1) Total Capacitance Reverse Recovery Time Notes:

IRM CT trr

1. Short duration pulse test used to minimize self-heating effect. 2. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on our ebsite w at http://www/diodes.com/datasheets/ap02001.pdf.

DS12002 Rev. 9 - 2

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1N4448W

500
Pd, POWER DISSIPATION (mW)

100

IF, FORWARD CURRENT (mA)

400

10

Ta = 25°C

300

Ta = 50°C

200

Ta = 85°C

1

Ta = 0°C

100
0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve
10.0

Ta = -30°C

0.1

0

200

400

600

800

1000

VF, FORWARD VOLTAGE (mV) Fig. 2 Typical Forward Characteristics
2.5
trr, REVERSE RECOVERY TIME (nS)

IR, REVERSE CURRENT (µA)

Ta = 100°C

2.0

1.0

1.5

Ta = 75°C

0.10
Ta = 50°C Ta = 25°C

1.0

0.01
Ta = -30°C

Ta = 0°C

0.5

0.001

0

0

20

40

60

80

0

2

4

6

8

10

4

VR, REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics
f = 1MHz

IF, FORWARD CURRENT (mA) Fig. 4 Reverse Recovery Time vs. Forward Current

CT, TOTAL CAPACITANCE (pF)

3

2

1

0 0 1 2

3

4

5

6

VR, REVERSE VOLTAGE (V) Fig. 5 Total Capacitance vs. Reverse Voltage

DS12002 Rev. 9 - 2

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1N4448W

Ordering Information (Note 1)
Device 1N4448W-7 Notes: Packaging SOD-123 Shipping 3000/Tape & Reel

1. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

T5

T5 = Product Type Marking Code (See Sheet 1) YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September)

Date Code Key Year Code Month Code Jan 1 1998 J Feb 2 1999 K March 3 2000 L Apr 4 May 5 2001 M Jun 6 2002 N Jul 7 Aug 8 2003 P Sep 9 2004 R Oct O Nov N 2005 S Dec D

DS12002 Rev. 9 - 2

YM

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1N4448W