|
|
Part: 2N7002T
Category:
Description: 60V; 15mA N-channel Enchancement Mode Field Effect Transistor
Company: Diodes, Inc.
Datasheet: Download 2N7002T datasheet File size : 62 kB
Request For quote: Find where to buy 2N7002T
Datasheet text preview:
2N7002T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
· · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package
G G H K N M
NEW PRODUCT
UNDER DEVELOPMENT
SOT-523
TOP VIEW D B S A C
Dim A B C D G H J K L M N
Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45
Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65
Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50
Mechanical Data
· · · · · · · Case: SOT-523, Molded Plastic Case Material UL Flammability Rating: 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: 72 Weight: 0.002 grams (approx.) Ordering Information, see Sheet 2
J
D
L
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
@ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS ID Pd RqJA Tj, TSTG 2N7002T 60 60 ±20 ±40 115 73 800 150 833 -55 to +150 Units V V V mA mW °C/W °C
Characteristic Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current
Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
DS30301 Rev. A-1
1 of 2
2N7002T
NEW PRODUCT
Electrical Chacteristics
Characteristic OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time
@ TA = 25°C unless otherwise specified Symbol BVDSS @ TC = 25°C @ TC = 125°C IDSS IGSS VGS(th) @ Tj = 25°C @ Tj = 125°C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 ¾ ¾ 1.0 ¾ 0.5 80 ¾ ¾ ¾ ¾ ¾ Typ 70 ¾ ¾ ¾ 3.2 4.4 1.0 ¾ 22 11 2.0 7.0 11 Max ¾ 1.0 500 ±10 2.0 7.5 13.5 ¾ ¾ 50 25 5.0 20 20 Unit V µA nA V W A mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A
Note: 1. Short duration pulse test used to minimize self-heating effect.
Ordering Information
Device 2N7002T Notes:
(Note 2) Packaging SOT-523 Shipping 3000/Tape & Reel
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XX = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September)
XXYM
Date Code Key Year Code Month Code 1998 J Jan 1 Feb 2 1999 K March 3 2000 L Apr 4
2001 M May 5 Jun 6
2002 N Jul 7 Aug 8
2003 O Sep 9 Oct O
2004 P Nov N Dec D
UNDER DEVELOPMENT
DS30301 Rev. A-1
2 of 2
2N7002T
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
|
|
|
