Details, datasheet, quote on part number: 5KP16A
Description5000W Transient Voltage Suppressor
CompanyDiodes, Inc.
DatasheetDownload 5KP16A datasheet
Cross ref.Similar parts: 5KP16A(P-600)
Find where to buy


Features, Applications

5000W Peak Pulse Power Dissipation - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-directional Version Available Excellent Clamping Capability Fast Response Time Plastic Case Material has UL Flammability Classification Rating 94V-0

Case: 5KP/5KW, Transfer Molded Epoxy Terminals: Solderable per MIL-STD-202, Method 208 Polarity Indicator: Cathode Band (Note: Bi-directional devices have no polarity indicator.) Marking: Type Number Weight: 2.1 grams (approx.)

All Dimensions in mm "S" Suffix Designates 5KW Package No "S" Designates 5KP Package
= 25C unless otherwise specified Symbol PPK Value 5000 Unit W

Characteristic Peak Pulse Power Dissipation (Non repetitive current pulse derated above 25C) ( Note 1) Peak Forward Surge Current, 8.3ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Notes Steady State Power Dissipation = 75C, Lead Lengths 9.5mm(Note 1) Instantaneous Forward Voltage @ IPP = 100A (Notes Operating and Storage Temperature Range

1. Valid provided that the terminals are maintained at a distance of 10mm from case 25C. 2. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum. 3. Unidirectional units only.

4. Suffix C denotes Bi-directional device. 5. VBR measured with IT current pulse 300ms 6. For Bi-Directional devices having VRWM of 10V and under, the IR is doubled.

VRWM, REVERSE STANDOFF VOLTAGE (V) Fig. 2 Typical Junction Capacitance
TP, PULSE WIDTH (ms) Fig. 3 Pulse Derating Curve
Single Phase Half-Wave 60Hz Resistive or Inductive Load
X 1000 Waveform as defind by REA TA, AMBIENT TEMPERATURE (C) Fig. 4 Pulse Derating Curve


Related products with the same datasheet
Some Part number from the same manufacture Diodes, Inc.
5KP16CA 5000W Transient Voltage Suppressor
5KP180CA 180V; 5000W Transient Voltage Suppressor
5KP180CA 5000W Transient Voltage Suppressor
5KP5.0S-180CA Transient Voltage Suppressor
5KP51A 5000W Transient Voltage Suppressor
5KPCSeries 5000w Transient Voltage Suppressor
6A01 6.0a Rectifier
6A08 6.0A Silicon Rectifier
6A1 Standard Rectifiers
6A10 6.0A Silicon Rectifier
6A2 Standard Rectifiers
ASMCC0096 Complex Arrays
AZ23C10 300mW Dual Surface Mount Zener Diode
AZ23C10W 200mW Dual Surface Mount Zener Diode
AZ23C11 300mW Dual Surface Mount Zener Diode
AZ23C18W 200mW Dual Surface Mount Zener Diode
AZ23C20 300mW Dual Surface Mount Zener Diode

1N914B : Small Signal Silicon Switching Diode

MBRM360-13 : 3A Surface Mount Schottky Barrier Rectifier

SF20AG : Glass Passivated 2.0A Super-fast Glass Passivated Rectifier

SBG2030CT-T-F : 20A Surface Mount Schottky Barrier Rectifier

SMBJ110A-13-F : 600W Surface Mount Transient Voltage Suppressor

AP6015-18M10G-13 : High Efficiency Step-down Low Power Dc-dc Converter

DMN6068SE-13 : Fet - Single Discrete Semiconductor Product 4.1A 60V 2W Surface Mount; MOSFET N-CH 60V 4.1A SOT223 Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 60V ; Current - Continuous Drain (Id) @ 25 C: 4.1A ; Rds On (Max) @ Id, Vgs: 68 mOhm @ 12A, 10V ; Input Capacitance (Ciss) @ Vds: 502pF @ 30V ; Power - Max: 2W ; Packaging: Tape

SBR10U300CTFP : Diodes, Rectifier - Array Discrete Semiconductor Product 10A 300V Super Barrier; DIODE SBR 10A 300V TO220-3 Specifications: Diode Type: Super Barrier ; Diode Configuration: 1 Pair Common Cathode ; Voltage - DC Reverse (Vr) (Max): 300V ; Current - Average Rectified (Io) (per Diode): 10A ; Voltage - Forward (Vf) (Max) @ If: 920mV @ 10A ; Current - Reverse Leakage @ Vr: 200A @ 300V ; Reverse Recovery Time (

MMST2907A-7 : Transistor (bjt) - Single Discrete Semiconductor Product 600mA 60V 200mW PNP; TRANSISTOR PNP 60V SC70-3 Specifications: Transistor Type: PNP ; Voltage - Collector Emitter Breakdown (Max): 60V ; Current - Collector (Ic) (Max): 600mA ; Power - Max: 200mW ; DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V ; Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA ; Frequency - Transition: 200MHz ; Curren

BC857BLP-7B : Transistor (bjt) - Single Discrete Semiconductor Product 100mA 45V 250mW PNP; TRANS PNP 45V 100MA DFN1006-3 Specifications: Transistor Type: PNP ; Voltage - Collector Emitter Breakdown (Max): 45V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 250mW ; DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V ; Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA ; Frequency - Transition: 100MHz ; Current -

DDTC143XE-7-F : Transistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 100mA 50V 150mW NPN - Pre-Biased; TRANS PREBIASED NPN 150MW SOT523 Specifications: Transistor Type: NPN - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 150mW ; Resistor - Base (R1) (Ohms): 4.7K ; Resistor - Emitter Base (R2) (Ohms): 10K ; Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA ; Curr

DMP32D9UFZ-7B : MOSFET P-CH 30V 0.22A X2-DFN0606 Diodes Incorporated has extended its range of ultra-small discrete products for space critical product design. The company has announced a trio of small signal MOSFETs in the tiny DFN0606 package; 20 V and 30 V rated N-channel transistors and a 30 V rated P-channel part. With a fo

0-C     D-L     M-R     S-Z