Details, datasheet, quote on part number: BAV70-7
PartBAV70-7
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionDual Surface Mount Switching Diode
CompanyDiodes, Inc.
DatasheetDownload BAV70-7 datasheet
Cross ref.Similar parts: BAV70
Quote
Find where to buy
 
  

 

Features, Applications
DUAL SURFACE MOUNT SWITCHING DIODE Features

Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance

Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KJJ (See Page 2) Weight: 0.008 grams (approx.)

Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current = 1.0s Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFRM IFSM Pd RqJA Tj , TSTG to +150 Unit A mW C/W C

= 25C unless otherwise specified Symbol VFM Min Max Unit Test Condition = 10mA, Irr 0.1 x IR, = 100W

Reverse Current (Note 2) Total Capacitance Reverse Recovery Time Notes:

1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect.

VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics
Tj, JUNCTION TEMPERATURE (C) Fig. 2 Leakage Current vs Junction Temperature

XXX = Product Type Marking Code (See Page YM = Date Code Marking Y = Year ex: M = Month ex: 9 = September

Date Code Key Year Code Month Code 1998 J Jan 1 Feb 1999 K March 2000 L Apr 4 May 2001 M Jun 6 Jul 2002 N Aug 8 Sep 2003 P Oct O Nov 2004 R Dec D


 

Some Part number from the same manufacture Diodes, Inc.
BAV70DW Quad Surface Mount Switching Diode Array
BAV70DW-7
BAV70T Surface Mount Fast Switching Diode
BAV70T-7
BAV70W Dual Surface Mount Switching Diode
BAV70W-7
BAV756DW Quad Surface Mount Switching Diode Array
BAV99 Dual Surface Mount Switching Diode
BAV99-7
BAV99BRW Quad Surface Mount Switching Diode Array
BAV99DW
BAV99DW-7
BAV99T Surface Mount Fast Switching Diode
BAV99T-7
BAV99W Dual Surface Mount Switching Diode
BAV99W-7
BAW156 85V; 140mA Very Low Leakage Diode
BAW156T 85V; 215mW Surface Mount Low Leakage Diode
BAW56 Dual Surface Mount Switching Diode
BAW56-7
BAW567DW 100V; 300mA Quad Surface Mount Swithcing Diode Array. For General Purpose Switching Applications

TBZ363C6V4-7-F : Triple Bi-directional Surface Mount Zener Diode Array

BAV199S : DUAL Surface Mount LOW Leakage Diode

ZTX653 : Transistors Bipolar (BJT) NPN Super E-Line Specifications: Manufacturer: Diodes Inc. ; Product Category: Transistors Bipolar (BJT) ; RoHS:  Details ; Transistor Polarity: NPN ; Collector- Emitter Voltage VCEO Max: 100 V ; Emitter- Base Voltage VEBO: 5 V ; Maximum DC Collector Current: 2 A ; Configuration: Single ; Maximum Operating Freq

AH1803-SNG-7 : Magnetic - Hall Effect, Digital Switch, Linear, Compass (ICs) IC HALL SWITCH MCRPWR 6-DFN -; IC HALL SWITCH MCRPWR 6-DFN Specifications: Features: - ; Package / Case: 6-UDFN Exposed Pad ; Current - Output (Max): - ; Sensing Range: 4mT Trip, 1mT Release ; Operating Temperature: -40C ~ 85C ; Output Type: Digital, Open Drain ; Type: Omnipolar Switch ; Voltage - Supply: 2.4 V ~ 5.5 V ; Current - Supply: 6mA ; Lead Fre

PDS1240CTL-13 : Diodes, Rectifier - Array Discrete Semiconductor Product 6A 40V Cut Tape (CT) Schottky; DIODE ARR SCHTKY 40V 6A POWERDI5 Specifications: Diode Type: Schottky ; Diode Configuration: 1 Pair Common Cathode ; Voltage - DC Reverse (Vr) (Max): 40V ; Current - Average Rectified (Io) (per Diode): 6A ; Voltage - Forward (Vf) (Max) @ If: 520mV @ 6A ; Current - Reverse Leakage @ Vr: 350A @ 40V ; Reverse Recovery Time (trr): - ;

MMBD4448HTW-7-F : Diodes, Rectifier - Array Discrete Semiconductor Product 250mA 80V Standard; DIODE SW ARRAY 200MW 80V SOT363 Specifications: Diode Type: Standard ; Diode Configuration: 3 Independent ; Voltage - DC Reverse (Vr) (Max): 80V ; Current - Average Rectified (Io) (per Diode): 250mA ; Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA ; Current - Reverse Leakage @ Vr: 100nA @ 70V ; Reverse Recovery Time (trr): 4ns ;

MMSZ5255B-7-F : Diode - Zener - Single Discrete Semiconductor Product 100nA @ 21V 28V 500mW Surface Mount; DIODE ZENER 28V 500MW SOD-123 Specifications: Voltage - Zener (Nom) (Vz): 28V ; Power - Max: 500mW ; Impedance (Max) (Zzt): 44 Ohm ; Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA ; Current - Reverse Leakage @ Vr: 100nA @ 21V ; Tolerance: 5% ; Mounting Type: Surface Mount ; Package / Case: SOD-123 ; Packaging: Digi-Reel ; Ope

MMSZ5229BS-7-F : Diode - Zener - Single Discrete Semiconductor Product 5A @ 1V 4.3V 200mW Surface Mount; DIODE ZENER 4.3V 200MW SOD-323 Specifications: Voltage - Zener (Nom) (Vz): 4.3V ; Power - Max: 200mW ; Impedance (Max) (Zzt): 22 Ohm ; Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA ; Current - Reverse Leakage @ Vr: 5A @ 1V ; Tolerance: 5% ; Mounting Type: Surface Mount ; Package / Case: SC-76, SOD-323 ; Packaging: Cut Tape (C

TB0900L-13 : Tv - Thyristor Circuit Protection 150A 98V; THYRISTOR PROTECT BI-DIR 30A SMB Specifications: Package / Case: DO-214AA, SMB ; Packaging: Cut Tape (CT) ; Capacitance: 100pF ; Voltage - Breakover: 98V ; Current - Peak Pulse (8 x 20s): 150A ; Current - Peak Pulse (10 x 1000s): 30A ; Lead Free Status: Contains Lead ; RoHS Status: RoHS Non-Compliant

FZT593TA : Transistor (bjt) - Single Discrete Semiconductor Product 1A 100V 2W PNP; TRANS PNP -100V -1000MA SOT-223 Specifications: Transistor Type: PNP ; Voltage - Collector Emitter Breakdown (Max): 100V ; Current - Collector (Ic) (Max): 1A ; Power - Max: 2W ; DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V ; Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA ; Frequency - Transition: 50MHz ; Current - Co

DDTC144VUA-7 : Transistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 30mA 50V 200mW NPN - Pre-Biased; TRANS PREBIAS NPN 200MW SC70-3 Specifications: Transistor Type: NPN - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 30mA ; Power - Max: 200mW ; Resistor - Base (R1) (Ohms): 47K ; Resistor - Emitter Base (R2) (Ohms): 10K ; Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA ; Curren

1N4936GPT50A : 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 Specifications: Diode Type: General Purpose ; IF: 1000 mA ; trr: 0.2000 ns

Same catergory

1N5333 : Zener Voltage Regulator Diode, Package : T-18.

2N3965 : Screening Options Available = ;; Polarity = PNP ;; Package = TO18 (TO206AA) ;; Vceo = 45V ;; IC(cont) = 0.2A ;; HFE(min) = 250 ;; HFE(max) = 600 ;; @ Vce/ic = 5V / 1mA ;; FT = 40MHz ;; PD = 0.36W.

G10FG : . Mailing Address: P.O. Box 2245, Farmingdale, 07727 s Telephone: 938-4499 s Fax: 938-4451 s www.hvca.com 3 .

RXT2907A : PNP Medium Power Transistor (switching). ! 1) BVCEO< (IC=-10mA) 2) Complements the / PN2222A. !External dimensions (Units : mm) Part No. Packaging type Marking Code Basic ordering unit (pieces) T93 3000 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMT2907A, Collector power SST2907A, dissipation MMST2907A PN2907A Junction temperature Storage.

STD55N4F5 : Power MOSFETs N-channel 40 V, 7.1 m?, 40 A, DPAK STripFET V Power MOSFET.

03028-BP110AFMB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000011 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.10E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

B32671Z6103J000 : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 630 V, 0.01 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 630 volts ; Mounting.

DZ2S024 : 2.4 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.

ECEC1CU103K : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 10000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 10000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 16 volts ; Leakage Current: 1200 microamps ; Mounting Style: Through Hole ; Operating Temperature:.

H0505 : RESISTOR; JUMPER, THIN FILM, 0.125 W, 0.05; 0.1; 0.25; 0.5; 1; 2; 5 %, 25; 50; 100 ppm, 5.6 ohm - 470000 ohm, SURFACE MOUNT, 0505. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Operating DC Voltage: 40 volts ; Operating Temperature: 70 to 150 C (158.

PTMB50E6 : 50 A, 600 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: SIX PACK-17 ; Number of units in IC: 6.

PUMH17/T1 : 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: PLASTIC, SMD, SC-88, 6 PIN.

SMFB23L : 1.5 A, 30 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: SMF, 2 PIN ; Number of Diodes: 1 ; VRRM: 30 volts ; IF: 1500 mA.

VT2060C-E3/4W : 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 10000 mA ; Package: ROHS COMPLIANT, PLASTIC PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.

2N2919.MOD : 30 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF. s: Polarity: NPN ; Package Type: TO-77, 6 PIN.

 
0-C     D-L     M-R     S-Z