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Part: BAV99T-7
Category:
Discrete
-> Diodes & Rectifiers
-> Switching Diodes
Description: Surface Mount Fast Switching Diode
Company: Diodes, Inc.
Datasheet: Download BAV99T-7 datasheet File size : 65 kB
Request For quote: Find where to buy BAV99T-7
Datasheet text preview:
BAS16T, BAW56T, BAV70T, BAV99T
SURFACE MOUNT FAST SWITCHING DIODE Features
· · · · Ultra-Small Surface Mount Package Fast Switching Speed For General Purpose Switching Applications High Conductance
NEW PRODUCT
SOT-523 Dim
A C
Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0°
Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8°
Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾
A B
BC E
Mechanical Data
· · · · · · · · Case: SOT-523, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Marking: See Diagrams Below & Page 2 Weight: 0.002 grams (approx.) Ordering Information, see Page 2
TOP VIEW B G H K
C D G H J K L M N a
N
M
J
D
L
All Dimensions in mm
BAS16T Marking: A2
BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 2) Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0ms @ t = 1.0s Power Dissipation (Note 2) Thermal Resistance Junction to Ambient (Note 2) Operating and Storage Temperature Range Single diode Double diode Symbol VRRM VRWM VR VR(RMS) IFM IFRM IFSM Pd RqJA Tj , TSTG Value 85 60 155 75 500 4.0 1.0 0.5 150 833 -65 to +150 Unit V V mA mA A mW °C/W °C
DS30260 Rev. 3 - 2
1 of 3
BAS16T, BAW56T, BAV70T, BAV99T
Electrical Characteristics
@ TA = 25°C unless otherwise specified Symbol V(BR)R VF Min 85 ¾ Max ¾ 0.715 0.855 1.0 1.25 2.0 100 60 30 1.5 4.0 Unit V V mA mA mA nA pF ns Test Condition IR = 100mA IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 25V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W
NEW PRODUCT
Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1)
Leakage Current (Note 1) Typical Total Capacitance Reverse Recovery Time Notes:
IR CT trr
¾ ¾ ¾
1. Short duration test pulse to minimize self-heating effect. 2. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
IF, INSTANTANEOUS FORWARD CURRENT (mA)
30 0
1 0 00
250 IF, FORWARD CURRENT (mA) 20 0
Single diode loaded
100
TA = +150°C
150 100
Double diode loaded
TA = +125°C 10 TA = +75°C TA = +25°C TA = -25°C 0. 1 400 600 800 1000 1200
50 0 0 50 100 150 2 00
VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2, Typical Forward Characteristics
10
1
VR = 75V VR = 20V
0.1
0.01
0.001
0.0001 0 50 1 00 150 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 3, Typical Reverse Characteristics
Ordering Information (Note 3)
Device BAS16T-7 BAW56T-7 BAV70T-7 BAV99T-7 Notes: Packaging SOT-523 SOT-523 SOT-523 SOT-523 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datas eets/ap02007.pdf. h
DS30260 Rev. 3 - 2
2 of 3
BAS16T, BAW56T, BAV70T, BAV99T
Marking Information
NEW PRODUCT
XXYM
XX = Product Type Marking Code (See Page 1, e.g. A2 = BAS16T) YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September)
Date Code Key Year Code Month Code 2002 N Jan 1 2003 P Feb 2 2004 R March 3 Apr 4 2005 S May 5 2006 T Jun 6 Jul 7 2007 U Aug 8 Sep 9 2008 V Oct O Nov N 2009 W Dec D
DS30260 Rev. 3 - 2
3 of 3
BAS16T, BAW56T, BAV70T, BAV99T
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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