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Part: BC846A
Category:
Description: 80V; NPN Surface Mount Small Signal Transistor. For Switching And af Amplifier Applications
Company: Diodes, Inc.
Datasheet: Download BC846A datasheet File size : 65 kB
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Datasheet text preview:
BC846A - BC848C
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features
· · · Ideally Suited for Automatic Insertion Complementary PNP Types Available (BC856-BC858) For Switching and AF Amplifier Applications
SOT-23
A C TOP VIEW B E D G H K J L M C
Dim A B C D E G H J K L M
Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076
Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178
Mechanical Data
· · · · · Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Pin Connections and Marking Codes (See Table & Diagram) Approx. Weight: 0.008 grams Mounting Position: Any
Marking Code (Note 2) Type BC846A BC846B BC847A BC847B Marking 1A, K1Q 1B, K1R 1E, K1E, K1Q 1F, K1F, K1R Type BC847C BC848A BC848B BC848C
E
B
All Dimensions in mm
Marking 1G, K1M 1J, K1J, K1E, K1Q 1K, K1K, K1F, K1R 1L, K1L, K1M
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current
@ TA = 25°C unless otherwise specified Symbol BC846 BC847 BC848 BC846 BC847 BC848 BC846, BC847 BC848 VCBO VCEO VEBO IC ICM IEM Pd Tj, TSTG Value 80 50 30 65 45 30 6.0 5.0 100 200 200 310 -65 to +150 Unit V V V mA mA mA mW °C
Characteristic
Power Dissipation at TS = 50°C (Note 1) Operating and Storage Temperature Range Notes:
2 1. Package mounted on ceramic substrate 0.7mm x 2.5cm area. 2. Current gain subgroup "C" is not available for BC846.
DS11108 Rev. M-2
1 of 2
BC846A-BC848C
Electrical Characteristics
Characteristic
@ TA = 25°C unless otherwise specified Symbol BC846 BC847 V(BR)CBO BC848 Min 80 50 30 65 45 30 6 5 -- -- -- -- -- -- -- -- -- -- -- -- 110 200 420 -- -- -- -- 580 -- -- -- -- -- -- 100 -- -- Typ -- -- -- -- -- -- -- 220 330 600 2.7 4.5 8.7 18 30 60 1.5x10-4 2x10-4 3x10-4 180 290 520 -- -- 90 200 700 900 660 -- -- -- -- -- -- 300 3.0 2 Max -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 220 450 800 320 400 250 600 -- 700 770 15 15 15 15 5.0 -- -- 10 Unit V V V -- -- -- kW kW kW µS µS µS -- -- -- -- °C/W °C/W mV mV mV nA nA nA nA µA MHz pF dB Test Condition IC = 10mA, IB = 0 IC = 10mA, IB = 0 IE = 1mA, IC = 0
Collector-Base Breakdown Voltage (Note 3)
Collector-Emitter Breakdown Voltage (Note 3) BC846 BC847 V(BR)CEO BC848 Emitter-Base Breakdown Voltage (Note 3) H-Parameters Small Signal Current Gain BC846, BC847 V BC848 (BR)EBO hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre hFE RqS RqJA VCE(SAT) VBE(SAT) VBE(ON) BC846 BC847 BC848 ICES ICES ICES ICBO ICBO fT CCBO NF
Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio A Current Gain Group B C DC Current Gain Current Gain Group A B (Note 3) C
VCE = 5.0V, IC = 2.0mA, f = 1.0kHz
VCE = 5.0V, IC = 2.0mA Note 1 Note 1 IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCE = 80V VCE = 50V VCE = 30V VCB = 40V VCB = 30V, TA = 150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 200µA, RS = 2.0kW, f = 1.0kHz, Df = 200Hz
Thermal Resistance, Junction to Substrate Backside Thermal Resistance, Junction to Ambient Air Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Base-Emitter Voltage (Note 3) Collector-Cutoff Current (Note 3)
Gain Bandwidth Product Collector-Base Capacitance Noise Figure
Notes:
2 1. Package mounted on ceramic substrate 0.7mm x 2.5cm area. 2. Current gain subgroup "C" is not available for BC846. 3. Short duration pulse test to minimize self-heating effect.
DS11108 Rev. M-2
2 of 2
BC846A-BC848C
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