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Part: MBR2550CT
Category:
Description: 30A Schottky Barrier Rectifier
Company: Diodes, Inc.
Datasheet: Download MBR2550CT datasheet File size : 140 kB
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Datasheet text preview:
MBR2535CT - MBR2560CT
30A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0
TO-220AB
L B C K D A
1 2 3
M
Dim A B C D E G
Min 14.22 9.65 2.54 5.84 ¾ 12.70 2.29 0.51 3.53Æ 3.56 1.14 0.30 2.03
Max 15.88 10.67 3.43 6.86 6.35 14.73 2.79 1.14 4.09Æ 4.83 1.40 0.64 2.92
E J N G
H J K L M N P
Mechanical Data
· · · · · · Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number
HH
Pin 1 + Pin 2 Pin 3 + + Case
P
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 130°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak Repetitive Reverse Surge Current (Note 3) Forward Voltage Drop @ IF = 15.0A, TC = 25°C @ IF = 15.0A, TC = 125°C @ IF = 30.0A, TC = 25°C @ IF = 30.0A, TC = 125°C @ TC = 25°C @ TC = 125°C Symbol VRRM VR W M VR VR(RMS) IO IFSM IRRM
@ TA = 25°C unless otherwise specified
MBR2535CT 35 25
MBR2545CT 45 32 30
MBR2550CT 50 35
MBR2560CT 60 42
Unit V V A A
150 1.0 ¾ ¾ 0.82 0.73 0.2 40 750 1.5 -65 to +150 0.5 0.75 0.65 ¾ ¾ 1.0 50 500
A
VFM
V
Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2)
IRM Cj RqJC Tj, TSTG
mA pF °C/W °C
Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes:
1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. 3. 2.0ms pulse width, f = 1.0KHz.
DS31036 Rev. D-2
1 of 2
MBR2535CT - MBR2560CT
IF, INSTANTANEOUS FORWARD CURRENT (A)
30
50
I(AV), AVERAGE RECTIFIED CURRENT (A)
Tj = 25°C IF Pulse Width = 300µs
24
10
Tj = 150°C Tj = 25°C
18
1.0
12
0.1
6
MBR2535CT & MBR2545CT MBR2550CT & MBR2560CT
0 0 50 100 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Derating Curve
0.01
0.2
0.4
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics
10000
IFSM, PEAK FORWARD SURGE CURRENT (A)
150
8.3 ms single half-sine-wave JEDEC method
Tj = 25°C f = 1.0MHz
100
Cj, JUNCTION CAPACITANCE (pF)
1000
50
0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current
100 0.1
MBR2535CT & MBR2545CT MBR2550CT & MBR2560CT
1.0
10
100
VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance
DS31036 Rev. D-2
2 of 2
MBR2535CT - MBR2560CT
Others parts begin by mb
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