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Details, datasheet, quote on part number:1N4005
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| Part: | 1N4005 |
| Category: | Discrete => Diodes & Rectifiers => General Purpose Diodes |
| Description: | Silicon Rectifier |
| Company: | Diotec Electronics Corporation |
| Datasheet: | Download 1N4005 datasheet File size : 175 kB |
| Request For quote: | Find where to buy 1N4005
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Datasheet text preview:
DIOTEC ELECTRONICS CORP.
18020 H o b a r t B l v d . , Unit B G a r d e n a , C A 90248 U . S . A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPDG-101-1B
FEATURES
MECHANICAL SPECIFICATION
R
PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area)
ACTUAL SIZE O F DO-41 PACKAGE
SERIES GP100 - GP110 DO - 4 1
LL BD (Dia)
EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES LOW FORWARD VOLTAGE DROP 1A at TA = 75 oC WITH NO THERMAL RUNAWAY
MECHANICAL DATA
LL
C a s e : JEDEC DO-41, m o l d e d silica g l a s s ( U / L Flammability R a t i n g 9 4 V - 0 ) Terminals: Plated axial leads S o l d e r i n g : P e r MIL-STD 202 Method 208 g u a r a n t e e d P o l a r i t y : C o l o r band denotes cathode Mounting Position: A n y W e i g h t : 0 . 0 1 2 O u n c e s ( 0 . 3 4 Grams) LD (Dia) Color B a n d Denotes Cathode BL
Sym BL BD LL LD
Minimum In mm 0.160 0.103 1.00 0.028 4.1 2.6 25.4 0.71
Maximum In mm 0.205 0.107 0.034 5.2 2.7 0.86
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
PARAMETER ( T E S T C O N D I T I O N S )
Series Number Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Peak Recurrent Reverse Voltage Average Forward Rectified Current @ TA = 75 oC, L e a d l e n g t h = 0.375 i n . (9.5 mm) P e a k F o r w a r d S u r g e C u r r e n t ( 8 . 3 mSec s i n g l e h a l f sine w a v e superimposed o n r a t e d load) Maximum Forward Voltage at 1 Amp D C Maximum Full Cycle Reverse Current @ TL = 75 oC (Note 1) M a x i m u m Average D C R e v e r s e C u r r e n t At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range
NOTES: (1) Lead length = 0.375 in. (9.5 mm) (2) Measured at 1MHz & applied reverse voltage of 4 volts
SYMBOL
RATINGS
GP100 GP101 GP102 GP104 GP106 GP108 GP110
UNITS
VRM VRMS VRRM IO I FSM VFM IRM(AV) IRM RJA CJ TJ, TSTG @ TA = 25oC o @ TA = 125 C
50 35 50
100 70 100
200 140 200
400 280 400 1
600 420 600
800 560 800
1000 700 1000
VOLTS
AMPS
50 1 5 0.5 30.0 30 10 -65 to +175
VOLTS µA °C/W pF °C
4.97fgpdg101
Typical Thermal Resistance, Junction to Ambient (Note 1)
H5
DIOTEC ELECTRONICS CORP.
18020 H o b a r t Blvd., U n i t B G a r d e n a , C A 90248 U . S . A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPDG-101-2B
1 AMP HIGH RELIABILITY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110
50
40
30 Single Phase, Half wave, 60 H z Resistive and Inductive Loads Lead Length = 0.375" (9.5 mm)
20 JEDEC Method 8.3 m S Half Sine Wave
10
A m b i e n t Temperature, o C FIGURE 1. FORWARD CURRENT DERATING CURVE
0 1 10 100
Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
10 10
TJ = 100 oC
1.0
1.0
0.1
0.1
TJ = 25 oC Pulse Width = 300 µS 1 % D u t y Cycle .01
TJ = 25 oC
20
60
80
100
120
140
0.01
Percent of Rated Peak Reverse Voltage Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE F I G U R E 4 . T Y P I C A L REVERSE CHARACTERISTICS
100
TJ = 2 5 C
o
1000
T J = 2 5 oC
10
100
TJ = 25 oC Non-repetitive Square Pulse di/dt =200 µS 0.1 0.1 1 10 100 10 0.01
0.1
1.0
10
Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
Pulse Duration ( M i l l i s e c o n d s ) FIGURE 6. PEAK FORWARD SURGE CURRENT
H6
4.97bgpdg101
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