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Details, datasheet, quote on part number:1N4933
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| Part: | 1N4933 |
| Category: | Discrete => Diodes & Rectifiers => General Purpose Diodes |
| Description: | Fast Silicon Rectifier |
| Company: | Diotec Electronics Corporation |
| Datasheet: | Download 1N4933 datasheet File size : 77 kB |
| Request For quote: | Find where to buy 1N4933
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Datasheet text preview:
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
D a t a Sheet No. FSDP-101-1B
FEATURES
MECHANICAL SPECIFICATION
ACTUAL SIZE OF DO-41 PACKAGE
SERIES 1N4933 - 1N4937 DO - 41
Low cost Low leakage
LL Low forward voltage drop High current capacity Fast switching for high efficiency BL Color Band Denotes Cathode LL Case: JEDEC DO-41, molded plastic (U/L Flammability Rating 94V-0) Terminals: Plated axial leads Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Color band denotes cathode Mounting Position: Any Weight: 0.012 Ounces (0.34 Grams) B D (Dia)
MECHANICAL DATA
LD (Dia)
Sym BL BD LL LD
Minimum In mm 0.160 0.103 1.00 0.028 4.1 2.6 25.4 0.71
Maximum In mm 5.2 0.205 0.107 0.034 2.7 0.86
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
PARAMETER (TEST CONDITIONS)
Series Number Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Peak Recurrent Reverse Voltage Average Forward Rectified Current @ TA = 75 oC, Lead length = 0.375 in. (9.5 mm) Peak Forward Surge Current ( 8.3 mSec single half sine wave superimposed on rated load) Maximum Forward Voltage at 1 Amp DC Maximum Reverse Recovery Time (IF=1A, VR=30V - See Fig. 5) Maximum Average DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range @ TA = 25oC @ TA = 100oC
SYMBOL
1N4933 VRM VRMS VRRM IO IFSM VFM TRR IRM RJA CJ TJ, TSTG 50 35 50 1N4934 100 70 100
RATINGS
1N4935 200 140 200 1 1N4936 400 280 400 1N4937 600 420 600
UNITS
VOLTS
AMPS 30 1.2 200 5 100 41 15 -65 to +175 VOLTS nS µA °C/W pF °C
4.97ffsdp1
Typical Thermal Resistance, Junction to Ambient (Note 1)
NOTES: (1) Thermal resistance from junction to ambient with diode mounted on PC Board and lead lengths = 0.375 in. (9.5 mm) (2) Measured at 1MHz & applied reverse voltage of 4 volts
H23
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
D a t a Sheet No. FSDP-101-2B
1 AMP FAST RECOVERY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES 1N4933 - 1N4937
50
40 JEDEC Method 8.3 mS Half Sine Wave T J = 150 o C
30
Single Phase, Half wave, 60 Hz Resistive and Inductive Loads
20
10
Ambient Temperature, oC FIGURE 1. FORWARD CURRENT DERATING CURVE
0 1 10 100
Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
10
100
TJ = 25 oC
1.0
f = 1 MHz
10
0.1
T J = 25 o C Pulse Width = 300 µS
0.01
0.1 0.1
1
10
Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
50 noninductive 10 noninductive
Reverse Voltage, (Volts) FIGURE 4. TYPICAL JUNCTION CAPACITANCE PER DIODE
TRR 0.5
(+)
2 5 VDC (APPROX)
D.U.T.
(-)
PULSE GENERATOR (Note 2 )
0.0
(-)
1 noninductive OSCILLOSCOPE (Note 1)
(+)
-0.5
-1.0
NOTES: (1) Rise time = 7nS max., input impedance = 1 Megohm, 22 pF (2) Rise time = 10nS max., source impedance = 50 ohms
Set time base for 10nS/cm
1 cm
H24
FIGURE 5. REVERSE RECOVERY TEST SETUP AND TIME CHARACTERISTIC
4.97bfsdp101
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