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Details, datasheet, quote on part number:ADB306
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Datasheet text preview:
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
D a t a Sheet No. BRDB-300-1C ABDB-300-1C
FEATURES
PRV Ratings from 50 to 1000 Volts Surge overload rating to 60 Amps peak Reliable low cost molded plastic construction Ideal for printed circuit board applications ACTUAL SIZE
DT DB306
MECHANICAL SPECIFICATION
SERIES DB300-DB310 and ADB304-ADB308
BH
UL RECOGNIZED - FILE #E124962
MECHANICAL DATA
Case: Molded plastic, U/L Flammability Rating 94V-0 Terminals: Round silver plated copper pins Soldering: Per MIL-STD 202 Method 208 guaranteed (NOTE 1) Polarity: Marked on top of case; positive lead at beveled corner Mounting Position: Any. Thru hole provided for #6 screw (NOTE 2) Weight: 0.13 Ounces (3.6 Grams)
SYM BL BH D1 LL LD MILLIMETERS MIN 14.7 4.8 10.3 19.0 0.7 MAX 15.7 5.3 11.3 n/a 0.9 INCHES MIN 0.58 0.19 0.405 0.75 0.028 MAX 0.62 0.21 0.445 n/a 0.035
_ +
LL
LD D1
+
D1 _ BL
BL
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
RATINGS
PARAMETER (TEST CONDITIONS)
Series Number Maximum DC Blocking Voltage Working Peak Reverse Voltage Maximum Peak Recurrent Reverse Voltage RMS Reverse Voltage Power Dissipation in V(BR) Region for 100 µS Square Wave Continuous Power Dissipation in V(BR) Region @ THS=80 oC (Heat Sink Temp) Thermal Energy (Rating for Fusing) t < 8.3mSec Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). Tc = 60O C @ TC = 60o C (Note 2) Average Forward Rectified Current @ TA = 25o C (Note 3)
Junction Operating and Storage Temperature Range Minimum Avalanche Voltage Maximum Avalanche Voltage Maximum Forward Voltage (Per Diode) at 1.5 Amps DC Typical Junction Capacitance (Note 4)
SYMBOL
CONTROLLED AVALANCHE ADB ADB ADB DB 304 306 308 300
NON-CONTROLLED AVALANCHE DB DB 301 302 DB 304 DB 306 DB DB 308 310
UNITS
VRM VRWM VRRM VR (RMS) PRM PR I2 t I FSM IO TJ, TSTG V(BR) Min V(BR) Max VFM CJ @ TA = 25o C @TA = 125o C IRM VISO RJA RJC See Note 5 See Note 5
280 420 300 1 15 60 3 2 -55 to +150 n/a n/a 0.95 (Typical < 0.9) 21 1 50 2500 560 35 70 140 280 n/a 420 560 700 400 600 800 50 100 200 400 600 8 0 0 1000
VOLTS
WATTS
n/a
AMPS2 SEC AMPS
°C
VOLTS
pF µA VOLTS
o
Maximum Reverse Current at Rated VRM
Minimum Insulation Breakdown Voltage (Circuit to Case) Typical Thermal Resistance Junction to Ambient (Note 3) Junction to Case (Note 2)
C/W
3.01 0 3 d b
NOTES: (1) Bolt bridge on heat sink with #6 screw, using silicon thermal compound between bridge and mounting surface for maximum heat transfer.
(2) Bridge mounted on 4.0" sq. x 0.11" thick (10.5cm sq. x 0.3cm) aluminum plate (3) Bridge mounted on PC Board with 0.5" sq. (12mm sq.) copper pads and bridge lead length of 0.375" (9.5mm) (4) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (5) These bridges exhibit the avalanche characteristic at breakdown. If your application requires a specific breakdown voltage range, please contact us.
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DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data S h e e t N o . B R D B - 3 0 0 - 2 C ABDB-300-2C
3 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB300 - DB310 and SERIES ADB304 - ADB308
60
60Hz
Resistive and Inductive Loads Case, Tc
40 50
NOTE 1
30
Ambient, TA
NOTE 2
20
10 1 10 100
Temperature, oC
Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
50
10
T J = 125 o C 10
1.0
NOTE 3
1.0
0.1
0.1
T J = 2 5 oC
.01
0.01
20
60
80
100
120
140
Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
100
NOTES NOTE 4 (1) Case Temperature, TC, With Bridge Mounted on 4" Sq. x 0.11" Thick (10.5cm Sq. x 0.3cm) Aluminum Plate Ambient Temperature, TA, With Bridge Mounted on PC Board With 0.5" Sq. (12mm Sq.) Pads and Lead Length of 0.375" (9.5mm)
10
(2) TC = 60o C
5 0.1 1 10 100
(3) TJ = 25o C; Pulse Width = 300µSec; 1% Duty Cycle (4) TJ = 25o C; f = 1 MHz; Vsig = 50mVp-p
Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
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4.97bbrwb200
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