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Details, datasheet, quote on part number:DB810
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Datasheet text preview:
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data S h e e t N o . B R D B - 8 0 0 - 1 C ABDB-800-1C
FEATURES
MECHANICAL SPECIFICATION
ACTUAL SIZE DT DB804
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR S U P E R I O R R E L I A B I L I T Y AND P E R F O R M A N C E SURGE OVERLOAD RATING TO 300 AMPS PEAK
SERIES DB800-DB810 and ADB804-ADB808
BH
AC
UL RECOGNIZED - FILE #E124962
MECHANICAL DATA
Case: Molded plastic, U/L Flammability Rating 94V-0 Terminals: Round silver plated copper pins
AC
LL
_ +
LD D1
+
Soldering: Per MIL-STD 202 Method 208 guaranteed D1 Polarity: Marked on side of case; positive lead at beveled corner _ Mounting Position: Any. Through hole provided for #6 screw Weight: 0.18 Ounces (5.4 Grams) BL BL
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
RATINGS
PARAMETER (TEST CONDITIONS)
Series Number Maximum DC Blocking Voltage Working Peak Reverse Voltage Maximum Peak Recurrent Reverse Voltage RMS Reverse Voltage Power Dissipation in V(BR) Region for 100 µS Square Wave Continuous Power Dissipation in V(BR) Region @ THS=80o C (Heat Sink Temp) Thermal Energy (Rating for Fusing) Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). TJ = 150O C @ TC = 50o C (Note 1) Average Forward Rectified Current @TA = 50o C (Note 2)
Junction Operating and Storage Temperature Range Minimum Avalanche Voltage Maximum Avalanche Voltage Maximum Forward Voltage (Per Diode) at 4 Amps DC
SYMBOL
CONTROLLED AVALANCHE ADB ADB ADB D B 804 806 808 800
NON-CONTROLLED AVALANCHE DB D B DB 801 802 804 DB 806 DB DB 808 810
UNITS
VRM VRWM VRRM VR (RMS) PRM PR I2t I FSM IO TJ, TSTG V(BR) Min V(BR) Max VFM @ TA = 25o C @TA = 125o C IRM VISO RJA RJC
See N o t e 4 See N o t e 4 280 420 400 2 64 300 10 8 -55 to +150 n/a n/a 0.95 (Typ. 0.90) 1 50 2000 12 5 560 35 70 140 280 n/a 420 560 700 400 600 800 50 100 200 400 600 8 0 0 1000
VOLTS
WATTS
n/a
AMPS2 SEC AMPS
°C
VOLTS
Maximum Reverse Current at Rated VRM
µA VOLTS
o
Minimum Insulation Breakdown Voltage (Circuit to Case) Typical Thermal Resistance Junction to Ambient (Note 2) Junction to Case (Note 1)
C/W
3.01 08db
NOTES: (1) Bridge mounted on 4.9" x 4.3" x 0.11" thick (12.4cm x 10.8cm x 0.3cm) aluminum plate (2) Bridge mounted on PC Board with 0.5" sq. (12mm sq.) copper pads and bridge lead length of 0.375" (9.5mm) (3) Bolt bridge on heat sink, using silicon thermal compound between bridge and mounting surface, for maximum heat transfer (4) These bridges exhibit the avalanche characteristic at breakdown. If your application requires a specific breakdown voltage range, please contact us.
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DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data S h e e t N o . B R D B - 8 0 0 - 2 C ABDB-800-2C
8 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB800 - DB810 and SERIES ADB804 - ADB808
300
60Hz Resistive or Inductive Loads NOTE 1 Case
250
200
Ambient
150
NOTE 2
100
50
1
10
100
Temperature, oC FIGURE 1. FORWARD CURRENT DERATING CURVE
100
Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
50
10 10
TJ = 100o C
1.0
1.0
NOTE 3
0.1
0.1
TJ = 25o C
0.01
0.01 0 20 40 60 80 100 120 140
Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
400
Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
NOTE 4
100
NOTES (1) Case Temperature, TC, With Bridge Mounted on 4.9" x 4.3" x 0.11" Thick (12.4cm x 10.8cm x 0.3cm) Aluminum Plate Ambient Temperature, TA, With Bridge Mounted on PC Board With 0.5" Sq. (12mm Sq.) Copper Pads And Bridge Lead Length of 0.375" (9.5mm)
10 1 10 100
(2) TJ = 150o C (3) TJ = 25o C; Pulse Width = 300µSec; 1% Duty Cycle (4) TJ = 25o C; f = 1 MHz; Vsig = 50mVp-p
3.01 08db
Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
E32
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