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Details, datasheet, quote on part number:PB66
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Datasheet text preview:
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
D a t a Sheet No. BRDB-600-1D ABDB-600-1D
FEATURES
MECHANICAL SPECIFICATION
ACTUAL SIZE
DT DB602
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) BUILT-IN STRESS RELIEF MECHANISM FOR S U P E R I O R R E L I A B I L I T Y AND P E R F O R M A N C E SURGE OVERLOAD RATING TO 250 AMPS PEAK
SERIES DB600 - DB610 and ADB604 - ADB608
BH
AC
UL RECOGNIZED - FILE #E124962
MECHANICAL DATA
Case: Molded plastic, U/L Flammability Rating 94V-0 Terminals: Round silver plated copper pins Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Marked on side of case; positive lead at beveled corner Mounting Position: Any. Through hole provided for #6 screw Weight: 0.13 Ounces (3.6 Grams)
SYM BL BH D1 LL LD
LL
AC
_
+
LD D1
MILLIMETERS MIN 14.7 5.8 10.3 19.0 1.0 MAX 15.7 6.9 11.3 n/a 1.1
INCHES MIN 0.58 0.23 0.405 0.75 0.039 MAX 0.62 0.27 0.445 n/a 0.042
+
D1 _ BL
BL
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
RATINGS
PARAMETER (TEST CONDITIONS)
Series Number Maximum DC Blocking Voltage Working Peak Reverse Voltage Maximum Peak Recurrent Reverse Voltage RMS Reverse Voltage Power Dissipation in V(BR) Region for 100 µS Square Wave Continuous Power Dissipation in V(BR) Region @ THS=80 oC (Heat Sink Temp) Thermal Energy (Rating for Fusing) t < 8.3mSec Peak Forward Surge Current. Single 60Hz Half-Sine Wave Superimposed on Rated Load (JEDEC Method). Tc = 60O C Average Forward Rectified Current, TC = 60 C (Note 2)
Junction Operating and Storage Temperature Range Minimum Avalanche Voltage Maximum Avalanche Voltage Maximum Forward Voltage (Per Diode) at 6 Amps DC Typical Junction Capacitance (Note 4)
o o
SYMBOL
CONTROLLED AVALANCHE A D B ADB A D B DB 604 606 608 600
NON-CONTROLLED AVALANCHE DB DB 601 602 DB 604 DB 606 DB DB 608 610
UNITS
VRM VRWM VRRM VR (RMS) PRM PR I2t IFSM IO TJ, TSTG V (BR) M i n V(BR) Max VFM CJ @ TA = 25 C @TA = 125o C IRM VISO RJC See Note 5 See Note 5
280 420 400 2 127 250 560 35 70 140 280 n/a 420 560 700 400 600 800 50 100 200 400 600 800 1 0 0 0
VOLTS
WATTS
n/a
AMPS2 SEC AMPS
6 -55 to +150 n/a n/a 0.95 (Typical < 0.9) 21 1 50 2500
°C
VOLTS
pF µA VOLTS
o
Maximum Reverse Current at Rated VRM
Minimum Insulation Breakdown Voltage (Circuit to Case) Typical Thermal Resistance, Junction to Case (Note 2)
C/W
3.01 06db
NOTES: (1) Bolt bridge on heat sink with #6 screw, using silicon thermal compound between bridge and mounting surface for maximum heat transfer.
(2) Bridge mounted on 4.0" sq. x 0.11" thick (10.5cm sq. x 0.3cm) aluminum plate (3) Bridge mounted on PC Board with 0.5" sq. (12mm sq.) copper pads and bridge lead length of 0.375" (9.5mm) (4) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (5) These bridges exhibit the avalanche characteristic at breakdown. If your application requires a specific breakdown voltage range, please contact us.
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DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data S h e e t N o . B R D B - 6 0 0 - 2 D ABDB-600-2D
6 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB600 - DB610 and SERIES ADB604 - ADB608
275 250
60Hz Resistive or Inductive Loads Case, Tc NOTE 1
225 200 175 150 125 100 75 50 25 1 10 100
NOTE 2
Temperature, oC FIGURE 1. FORWARD CURRENT DERATING CURVE
100
Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
100
TJ = 125o C 100 10
TJ = 100o C 10
1.0
NOTE 3
0.1
1.0
TJ = 25o C
0.01
0.1
0
20
40
60
80
100
120
140
Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
1000
Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE
NOTES NOTE 4 (1) Case Temperature, TC, With Bridge Mounted on 4"Sq. x 0.11" Thick (10.5cm Sq. x 0.3cm) Aluminum Plate (2) TJ = 150o C (3) TJ = 25o C; Pulse Width = 300µSec; 1% Duty Cycle (4) TJ = 25o C; f = 1 MHz; Vsig = 50mVp-p 50 - 400V 600 - 1000V
100
10 0.1
1
10
100
Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
3.01 06db
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