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Details, datasheet, quote on part number:PLR810
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Datasheet text preview:
DIOTEC ELECTRONICS CORP.
1 8 0 2 0 H o b a r t Blvd., Unit B G a r d e n a , C A 90248 U . S . A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. FSPD-200-1B
FEATURES
MECHANICAL SPECIFICATION
R
PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area)
A C T U A L SIZE O F DO-41 PACKAGE
S E R I E S R G P 2 0 0 - RGP210 DO - 4 1
LL BD (Dia)
EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES LOW FORWARD VOLTAGE DROP 2A at TA = 75 oC WITH NO THERMAL RUNAWAY
MECHANICAL DATA
LL
C a s e : J E D E C D O - 4 1 m o l d e d p l a s t i c (U/L F l a m m a b i l i t y R a t i n g 9 4 V - 0 ) Terminals: Plated axial leads S o l d e r i n g : P e r MIL-STD 202 Method 208 g u a r a n t e e d P o l a r i t y : C o l o r band denotes cathode Mounting Position: A n y W e i g h t : 0.01 O u n c e s ( 0 . 4 G r a m s ) LD (Dia) Color B a n d Denotes Cathode BL
Sym BL BD LL LD
Minimum In mm 0.160 0.103 1.00 0.028 4.1 2.6 25.4 0.71
Maximum In mm 0.205 0.107 0.034 5.2 2.7 0.86
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
PARAMETER ( T E S T C O N D I T I O N S )
Series Number Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Peak Recurrent Reverse Voltage Average Forward Rectified Current @ TA = 75 oC, L e a d l e n g t h = 0.375 i n . (9.5 mm) P e a k F o r w a r d S u r g e C u r r e n t ( 8 . 3 mSec s i n g l e h a l f sine w a v e superimposed o n r a t e d load) Maximum Forward Voltage at 2 Amps DC Maximum Reverse Recovery Time (IF=0.5A, IR=1A, IRR=0.25A) M a x i m u m Average D C R e v e r s e C u r r e n t At Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range
NOTES: (1) Measured at 1MHz & applied reverse voltage of 4 volts (2) 300 nS available - consult factory
SYMBOL
RGP 200 RGP 201 100 70 100 RGP 202 200 140 200
RATINGS
RGP 204 400 280 400 2 RGP 206 600 420 600 RGP 208 800 560 800 RGP 210 1000 700 1000
UNITS
VRM VRMS VRRM IO I FSM VFM TRR IRM CJ TJ, TSTG
50 35 50
VOLTS
AMPS
60 1.3 150 1.0 100 15 -65 to +175 250 500 (Note 2)
VOLTS nS µA pF °C
4.97ffspd200
@ TA = 25oC @ TA = 100oC
H29
DIOTEC ELECTRONICS CORP.
1 8 0 2 0 H o b a r t B l v d . , Unit B G a r d e n a , C A 90248 U . S . A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. FSPD-200-2B
2 AMP FAST RECOVERY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES RGP200 - RGP210
50
40
30
Single Phase, Half wave, 60 H z Resistive and Inductive Loads Lead Length = 0.375" (9.5 mm)
20
10
JEDEC Method 8.3 mS Single Half Sine Wave
A m b i e n t Temperature, o C FIGURE 1. FORWARD CURRENT DERATING CURVE
20 10
0
1
10
100
Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
100
TJ = 25 oC f = 1 MHz VSIG = 50 mV P-P
1.0
10
0.1
TJ = 25 oC Pulse Width = 300 µS 1% Duty Cycle
0.01
0.1 0.1
1
10
Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC
50 noninductive 10 noninductive
Reverse Voltage, (Volts) FIGURE 4. TYPICAL JUNCTION CAPACITANCE
TRR 0.5
(+)
25 VDC (APPROX)
D.U.T.
(-)
PULSE GENERATOR (Note 2)
0.0
(-)
1 noninductive OSCILLOSCOPE (Note 1 )
(+)
-0.5
-1.0
NOTES: (1) Rise time = 7nS max., input impedance = 1 Megohm, 22 pF (2) Rise time = 10nS max., source impedance = 50 ohms
Set time base for 10nS/cm
1 cm
F I G U R E 5 . R E V E R S E R E C O V E R Y T E S T S E T U P A N D TIME C H A R A C T E R I S T I C
H30
4.97bfspd200
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